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Browsing Articole din publicaţii internaţionale by Author "MUÑOZ, A."

Browsing Articole din publicaţii internaţionale by Author "MUÑOZ, A."

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  • SANTAMARÍA-PÉREZ, D.; AMBOAGE, M.; MANJÓN, F. J.; ERRANDONEA, D.; MUÑOZ, A.; RODRÍGUEZ-HERNÁNDEZ, P.; MÚJICA, A.; RADESCU, S.; URSAKI, V. V.; TIGINYANU, I. M. (American Chemical Society, 2012)
    We report X-ray diffraction measurements in CdIn2S4, MgIn2S4, and MnIn2S4 thiospinels at room temperature and high pressures. The pressure dependences of the structural parameters have been determined and compared to those ...
  • GOMIS, O.; VILAPLANA, R.; MANJÓN, F. J.; RUIZ-FUERTES, J.; PÉREZ-GONZÁLEZ, E.; LÓPEZ-SOLANO, J.; BANDIELLO, E.; ERRANDONEA, D.; SEGURA, A.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; URSAKI, V. V.; TIGINYANU, I. M. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2015)
    High-pressure optical absorption measurements have been performed in defect chalcopyrite HgGa2Se4 to investigate the influence of pressure on the bandgap energy and its relation with the pressure-induced order–disorder ...
  • GOMIS, O.; VILAPLANA, R.; MANJÓN, F. J.; PÉREZ-GONZÁLEZ, E.; LÓPEZ-SOLANO, J.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; ERRANDONEA, D.; RUIZ-FUERTES, J.; SEGURA, A.; SANTAMARÍA-PÉREZ, D.; TIGINYANU, I. M.; URSAKI, V. V. (American Institute of Physics, 2012)
    High-pressure optical absorption and Raman scattering measurements have been performed in defect chalcopyrite (DC) CdGa2Se4 up to 22 GPa during two pressure cycles to investigate the pressure-induced order-disorder phase ...
  • VILAPLANA, R.; GOMIS, O.; PÉREZ-GONZÁLEZ, E.; ORTIZ, H. M.; MANJÓN, F. J.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; ALONSO-GUTIÉRREZ, P.; SANJUÁN, M. L.; URSAKI, V. V.; TIGINYANU, I. M. (AIP Publishing LLC, 2013)
    High-pressure Raman scattering measurements have been carried out in ZnGa2Se4 for both tetragonal defect chalcopyrite and defect stannite structures. Experimental results have been compared with theoretical lattice dynamics ...
  • GOMIS, O.; VILAPLANA, R.; MANJÓN, F. J.; SANTAMARÍA-PÉREZ, D.; ERRANDONEA, D.; PÉREZ-GONZÁLEZ, E.; LÓPEZ-SOLANO, J.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; TIGINYANU, I. M.; URSAKI, V. V. (American Institute of Physics, 2013)
    In this work, we focus on the study of the structural and elastic properties of mercury digallium selenide (HgGa2Se4) which belongs to the family of AB2X4 ordered-vacancy compounds with tetragonal defect chalcopyrite ...
  • LÓPEZ-MORENO, S.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; ROMERO, A. H.; MANJÓN, F. J.; ERRANDONEA, D.; RUSU, E.; URSAKI, V. V. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2011)
    In this work we present a first-principles density functional study of the vibrational properties of ZnAl2O4 and ZnGa2O4 as function of hydrostatic pressure. Based on our previous structural characterization of these two ...
  • VILAPLANA, R.; GOMIS, O.; MANJÓN, F. J.; ORTIZ, H.; PÉREZ-GONZÁLEZ, E.; LÓPEZ-SOLANO, J.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; ERRANDONEA, D.; URSAKI, V. V.; TIGINYANU, I. M. (American Chemical Society, 2013)
    We report on Raman scattering measurements in mercury digallium selenide (HgGa2Se4) up to 25 GPa. We also performed, for the low-pressure defect-chalcopyrite structure, lattice-dynamics ab initio calculations at high ...
  • MANJÓN, F. J.; GOMIS, O.; RODRÍGUEZ-HERNÁNDEZ, P.; PÉREZ-GONZÁLEZ, E.; MUÑOZ, A.; ERRANDONEA, D.; RUIZ-FUERTES, J.; SEGURA, A.; FUENTES-CABRERA, M.; TIGINYANU, I. M.; URSAKI, V. V. (American Physical Society, 2010)
    A strong nonlinear pressure dependence of the optical absorption edge has been measured in defect chalcopyrites CdGa2Se4 and HgGa2Se4. The behavior is due to the nonlinear pressure dependence of the direct band-gap energy ...
  • GOMIS, O.; SANTAMARÍA-PÉREZ, D.; VILAPLANA, R.; LUNA, R.; SANS, J. A.; MANJÓN, F. J.; ERRANDONEA, D.; PÉREZ-GONZÁLEZ, E.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; TIGINYANU, I. M.; URSAKI, V. V. (ELSEVIER, 2014)
    In this work, we focus on the study of the structural and elastic properties of mercury digallium sulfide (HgGa2S4) at high pressures. This compound belongs to the family of AB2X4 ordered-vacancy compounds and exhibits a ...
  • GALLEGO-PARRA, S.; GOMIS, O.; VILAPLANA, R.; ORTIZ, H. M.; PÉREZ-GONZÁLEZ, E.; LUNA, R.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; URSAKI, V. V.; TIGINYANU, I. M.; MANJÓN, F. J. (AIP Publishing LLC, 2019)
    Raman scattering measurements have been performed in cadmium digallium sulphide (CdGa2S4) with defect chalcopyrite structure up to 25 GPa in order to study its pressure-induced phase transitions. These measurements have ...
  • VILAPLANA, R.; ROBLEDILLO, M.; GOMIS, O.; SANS, J. A.; MANJÓN, F. J.; PÉREZ-GONZÁLEZ, E.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; TIGINYANU, I. M.; URSAKI, V. V. (American Institute of Physics, 2013)
    In this work, we report on high-pressure Raman scattering measurements in mercury digallium sulfide (HgGa2S4) with defect chalcopyrite structure that have been complemented with lattice dynamics ab initio calculations. Our ...

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