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Browsing Articole din publicaţii internaţionale by Author "MARIAN, S."

Browsing Articole din publicaţii internaţionale by Author "MARIAN, S."

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  • Chalcogenide based gas sensors 
    TSIULYANU, D.; MARIAN, S.; LIESS, H.-D.; EISELE, I. (National Institute of Optoelectronics, Romania, 2003)
    Evidence for direct application of the chalcogenide semiconductors for gas sensing is considered. Two kinds of sensitive thin film structures have been fabricated and studied, using both artificial dimorphite (As4S3) and ...
  • Chalcogenide based sensitive layers for work function gas and humidity sensors 
    TSIULYANU, D.; MARIAN, S.; MOCREAC, O. (Одеський нацiональный университет iменi I. I. Мечникова, 2012)
    In this work the authors report about characterization of chalcogenide based thin films, as a materials for gas – sensing applications. The sensing behavior of the As-S-Te-Ge films was tested with environmental pollutant ...
  • Chalcogenide semiconductor based sensor for fast NO/sub 2/ detection 
    TSIULYANU, D.; MARIAN, S.; MIRON, V.; POTJE-KAMLOTH, K.; LIESS, H.-D. (IEEE, 2000)
    For the first time if is shown that thin films based on tellurium alloys exhibit high sensitivity to nitrogen dioxide at room temperature. The resistance of the films decreases reversibly in the presence of NO/sub 2/. ...
  • Chalcogenide-based chemical sensors for atmospheric pollution control 
    MARIAN, S.; TSIULYANU, D.; MARIAN, T.; LIESS, H.-D. (De Gruyter, 2001)
    The authors report about characterization of chalcogenide-based thin films, as a materials for gas-sensing applications. The sensing behavior of the As–S–Te films was tested with environmental pollutant gases such as NO2, ...
  • Dimorphite based gas sensitive thin films 
    MARIAN, S.; POTJE-KAMLOTH, K.; TSIULYANU, D.; LIESS, H.-D. (Elsevier, 2000)
    For the first time it was observed that thin films based on artificial dimorphite (As4S3) exhibit gas sensitivity at room temperature. A sandwich metal-semiconductor-metal (MSM) structure with dimorphite as the semiconducting ...
  • Effect of annealing and temperature on the NO2 sensing properties of tellurium based films 
    TSIULYANU, D.; MARIAN, S.; LIESS, H.-D.; EISELE, I. (Elsevier, 2004)
    Influences of temperature and annealing on the electrical and sensing properties toward NO2 of tellurium based films were investigated. The annealing at temperatures more than 100°C causes a sharp decrease both of electrical ...
  • Gas sensing characterization of tellurium thin films by Kelvin probe technique 
    TSIULYANU, D.; MARIAN, S.; MOCREAC, O. (Institutul de Fizică Aplicată al AŞM, 2012)
    In this paper, the change of work function ( Δφ ) of the tellurium thin films was studied in response to different concentrations of nitrogen dioxide, carbon oxide, ozone and water vapor using a KP with a gold grid reference ...
  • Ge–As–Te-based gas sensor selective to low NO2 concentrations 
    MARIAN, S.; TSIULYANU, D.; LIESS, H.-D. (Elsevier, 2001)
    A new kind of gas sensor based on chalcogenide glassy semiconductors for the detection of nitrogen dioxide has been investigated. It contains a sandwich metal–semiconductor (Ge–As–Te ternary alloys)–metal structure which ...
  • High sensitive tellurium based NO2 gas sensor 
    TSIULYANU, D.; MARIAN, S.; MIRON, V.; LIESS, H.-D. (Elsevier, 2001)
    For the first time it is shown, that tellurium based thin films exhibit high sensitivity to nitrogen dioxide at room temperature. The resistance of the tellurium films decreases reversibly in the presence of NO2. The ...
  • A new propylamine sensor using artificial dimorphite 
    TSIULYANU, D.; MARIAN, S.; GUBA, M.; POTJE-KAMLOTH, K.; LIESS, H.-D. (IEEE, 1998)
    The sandwich metal-dimorphite(As/sub 4/S/sub 3/)-metal structure is used as a sensor for detection of propylamine (P/sub r/NH/sub 2/) vapor. The gas induced shifts of the current-voltage characteristics as well as transient ...
  • Nitrogen dioxide sensing properties of tellurium based films by thermal treatment 
    TSIULYANU, A.; MARIAN, S.; PUSHCACH, B.; TSIULYANU, D.; LIESS, H.-D. (IEEE, 2003)
    Influence of annealing on the electrical and sensing properties toward NO/sub 2/ of tellurium based films were investigated. The annealing at temperatures more than 100/spl deg/C causes a sharp decrease both of electrical ...
  • Optical absorption and thermal expansion of semiconductor glasses As-S-Ge by topological transition 
    TSIULYANU, D.; GUMENYUK, N.; MARIAN, S. (Society of Photo-Optical Instrumentation Engineers, SPIE, 1995)
    The effect of mean coordination number r on the optical absorption in the region of exponential tail and on the thermal expansion of chalcogenide glasses As-S-Ge are presented. Several important parameters such as optical ...
  • Optical absorption of chalcogenide glassy photoresists As-S-Ge 
    MARIAN, S.; TSIULYANU, D. I. (IEEE, 1995)
    The absorption edge of some chalcogenide glassy semiconductors (ChGS) As-S-Ge both in bulk and thin films is studied. The region of the Urbach tail is considered particularly as it determines the efficiency of photostructural ...
  • Sensing properties of tellurium based films to propylamine 
    TSIULYANU, D.; MARIAN, S.; MIRON, V.; LIESS, H.-D. (IEEE, 2001)
    The effect of propylamine (C/sub 3/H/sub 7/NH/sub 2/) on electrical conductivity of tellurium based thin films has been investigated. It is shown that the absorption of the propylamine vapor leads to reversible increase ...
  • Sensing properties of tellurium based thin films to propylamine and carbon oxide 
    TSIULYANU, D.; MARIAN, S.; LIESS, H.-D. (Elsevier, 2002)
    The effect of propylamine (C3H7NH2) and carbon oxide on electrical conductivity of tellurium based thin films has been investigated. It is shown that the absorption of the propylamine vapor leads to reversible increase of ...
  • A simple and high effective tellurium based sensor for NO/sub 2/ detection 
    TSIULYANU, D.; MARIAN, S.; LIESS, M.; LIESS, H.-D.; EISELE, I. (IEEE, 2004)
    A simple and stable NO/sub 2/ gas sensor device with rapid response/recovery time and low operating temperature has been developed using polycrystalline tellurium. The effect of thickness of the sample, thermal treatment ...

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