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Browsing Articole din publicaţii internaţionale by Author "ANEDDA, A."

Browsing Articole din publicaţii internaţionale by Author "ANEDDA, A."

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  • Excitation and temperature tuned photoluminescence in HgGa2S4 single crystals 
    URSAKI, V. V.; RICCI, P. C.; TIGINYANU, I. M.; ANEDDA, A.; SYRBU, N. N.; TEZLEVAN, V. E. (ELSEVIER, 2002)
    Mercury thiogallate single crystals are shown to exhibit bright photoluminescence (PL) tunable in a wide spectral range from green to red when changing the excitation power density, wavelength and sample temperature. Taking ...
  • Luminescent and Photoconductive Properties of AgGa2.5In2.5S8 and CuGa2.5In2.5S8 New Semiconductors 
    ANEDDA, A.; SERPI, A.; MOLDOVYAN, N. A.; TIGINYANU, I. M.; URSAKI, V. V. (IOP Publishing, 1993)
    Results of a complex study of photoluminescence (PL), photoconductivity (PC) and photo-voltaic (PV) spectra in AgGa2.5In2.5S8 and CuGa2.5In2.5S8 single crystals are presented. The values of indirect (Egi=2.25 eV) and direct ...
  • Persistent photoconductivity and optical quenching of photocurrent in GaN layers under dual excitation 
    URSAKI, V. V.; TIGINYANU, I. M.; RICCI, P. C.; ANEDDA, A.; HUBBARD, S.; PAVLIDIS, D. (American Institute of Physics, 2003)
    Persistent photoconductivity (PPC) and optical quenching (OQ) of photoconductivity (PC) were investigated in a variety of n-GaN layers characterized by different carrier concentrations, luminescence characteristics, and ...
  • Phase transitions in defect chalcopyrite compounds under hydrostatic pressure 
    URSAKI, V. V.; BURLAKOV, I. I.; TIGINYANU, I. M.; RAPTIS, Y. S.; ANASTASSAKIS, E.; ANEDDA, A. (American Physical Society, 1999)
    Tetrahedrally bonded AGa2X4(A=Cd, Zn; X=S, Se) compounds crystallizing in defect chalcopyrite and defect famatinite structures have been studied by Raman spectroscopy under hydrostatic pressure. The pressure-induced changes ...
  • Photoconductive properties of HgGa2S4 
    RICCI, P. C.; ANEDDA, A.; CORPINO, R.; TIGINYANU, I. M.; URSAKI, V. V. (ELSEVIER, 2003)
    Mercury thiogallate, HgGa2S4 is a defect chalcopyrite semiconductor with the space group S42 which offers a combination of attractive properties for applications. In order to obtain information about the electron states ...
  • Photoluminescence of Ce and Pr codoped calcium thiogallate 
    ANEDDA, A.; CARBONARO, C. M.; CHIRIU, D.; CORPINO, R.; MARCEDDU, M.; RICCI, P. C.; GEORGOBIANI, A. N.; TAGIEV, B. G.; TAGIEV, O. B.; ABUSHEV, S. A.; TIGINYANU, I. M. (John Wiley & Sons, Inc., 2006)
    We investigated the room temperature photoluminescence of calcium thiogallate codoped with Ce and Pr. Line shaped emissions superimposed over a wide and composed luminescence band were observed. Different components were ...
  • Recombination in HgGaInS4 single crystals 
    ANEDDA, A.; CASU, M. B.; SERPI, A.; BURLAKOV, I. I.; TIGINYANU, I. M.; URSAKI, V. V. (ELSEVIER, 1997)
    Photoelectronic processes in HgGaInS4 have been studied by photoconductivity, thermally stimulated conductivity and photoluminescence. An exponential distribution of traps with a slope of 23 meV/decade as well as a further ...
  • Temperature dependence of Raman scattering in porous gallium phosphide 
    URSAKI, V. V.; TIGINYANU, I. M.; RICCI, P. C.; ANEDDA, A.; FOCA, E. V.; SYRBU, N. N. (IOP Publishing, 2001)
    Porous layers fabricated by electrochemical anodization of (111)A-oriented n-GaP:Te substrates were studied by Raman scattering spectroscopy in the temperature interval from 10 to 300 K. Along with the transverse-optical ...
  • Temperature dependence of the photoluminescence spectra in AgGaS2 
    RICCI, P. C.; ANEDDA, A.; CORPINO, R.; CARBONARO, C. M.; MARCEDDU, M.; TIGINYANU, I. M.; URSAKI, V. V. (ELSEVIER, 2005)
    The Silver Gallium Sulfide (AgGaS2) ternary compound is a wide bandgap semiconductor (about 2.7eV) whose photoluminescence properties are characterized by excitons and donor–acceptor pairs recombinations. We have performed ...
  • Time resolved blue and ultraviolet photoluminescence in porous GaP 
    ANEDDA, A.; SERPI, A.; KARAVANSKII, V. A.; TIGINYANU, I. M.; ICHIZLI, V. M. (American Institute of Physics, 1995)
    Porous GaP layers prepared by electrochemical anodization of (100)-oriented bulk material was found to exhibit blue and ultraviolet photoluminescence when excited by a KrF excimer laser. The energy position of the UV ...

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