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Browsing Articole din publicaţii internaţionale by Author "URSAKI, V. V."

Browsing Articole din publicaţii internaţionale by Author "URSAKI, V. V."

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  • Nonlinear pressure dependence of the direct band gap in adamantine ordered-vacancy compounds 
    MANJÓN, F. J.; GOMIS, O.; RODRÍGUEZ-HERNÁNDEZ, P.; PÉREZ-GONZÁLEZ, E.; MUÑOZ, A.; ERRANDONEA, D.; RUIZ-FUERTES, J.; SEGURA, A.; FUENTES-CABRERA, M.; TIGINYANU, I. M.; URSAKI, V. V. (American Physical Society, 2010)
    A strong nonlinear pressure dependence of the optical absorption edge has been measured in defect chalcopyrites CdGa2Se4 and HgGa2Se4. The behavior is due to the nonlinear pressure dependence of the direct band-gap energy ...
  • Novel phosphors based on porous materials 
    TIGINYANU, I. M.; URSAKI, V. V.; SIRBU, L.; ENAKI, M.; MONAICO, E. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2009)
    Technological conditions have been developed for the preparation of nanocomposite phosphors based on porous InP, GaP and GaAs semiconductor as well as Al2O3 and TiO2 dielectric templates doped with rare earth and transition ...
  • Observation of 0.4 eV electron trap in electron-irradiated InP:Fe single crystals 
    TIGINYANU, I. M.; PYSHNAYA, N. B.; CALIN, M. V.; URSAKI, V. V. (IEEE, 1994)
    There has been increasing attention focused on the investigation of the /spl ap/0.4 eV electron trap in indium phosphide. According to G. Hirt et. al. (1993), the defect corresponding to that trap plays a major role in the ...
  • Observation of surface phonon mode in porous GaP 
    KARAVANSKII, V. A.; ANASTASSAKIS, Evangelos; RAPTIS, Y. S.; SOKOLOV, V. N.; TIGINYANU, I. M.; URSAKI, V. V. (Society of Photo-Optical Instrumentation Engineers, SPIE, 1996)
    Simple preparation technique of nanoporous semiconductors by anodization has opened new ways to form and investigate quantum and surface effects in nanosized objects. It has also allowed technologists to extend the range ...
  • Optical characterization of AlN/GaN heterostructures 
    URSAKI, V. V.; TIGINYANU, I. M.; ZALAMAI, V. V.; HUBBARD, S. M.; PAVLIDIS, D. (American Institute of Physics, 2003)
    AlN/GaN/sapphire heterostructures with AlN gate film thickness of 3–35 nm are characterized using photoreflectivity (PR) and photoluminescence (PL) spectroscopy. Under a critical AlN film thickness, the luminescence from ...
  • Optical characterization of hierarchical ZnO structures grown with a simplified vapour transport method 
    URSAKI, V. V.; RUSU, E. V.; SARUA, A.; KUBALL, M.; STRATAN, G. I.; BURLACU, A.; TIGINYANU, I. M. (IOP Publishing, 2007)
    A new ZnO micro/nanostructure morphology in the form of micro-torches was grown in the family of ZnO hierarchical structures by a simplified thermal chemical vapour transport and condensation method using a vertical furnace. ...
  • Optical properties of Sm-doped ceria nanostructured films grown by electrodeposition at low temperature 
    URSAKI, V. V.; LAIR, V.; ŻIVKOVIĆ, L.; CASSIR, M.; RINGUEDÉ, A.; LUPAN, O. (ELSEVIER, 2012)
    Nanostructured undoped and samarium doped ceria thin nanocolumnar films are electrodeposited onto (FTO) glass substrates at low-temperature (30°C) with a subsequent thermal annealing at 600°C for 1h. Films are obtained ...
  • Optical properties of ZnO nanowire arrays electrodeposited on n- and p-type Si(111): Effects of thermal annealing 
    LUPAN, O.; PAUPORTÉ, Th.; TIGINYANU, I. M.; URSAKI, V. V.; HEINRICH, H.; CHOW, L. (ELSEVIER, 2011)
    Electrodeposition is a low temperature and low cost growth method of high quality nanostructured active materials for optoelectronic devices. We report the electrochemical preparation of ZnO nanorod/nanowire arrays on ...
  • Optical spectra and energy band structure of AgAsS2 crystals 
    STAMOV, I. G.; SYRBU, N. N.; URSAKI, V. V.; PARVAN, V. (ELSEVIER, 2012)
    Ground and excited states of three exciton series are observed in the region of fundamental absorption edge of AgAsS2 crystals. The contours of exciton reflection spectra are calculated and the main parameters of excitons ...
  • Optical spectra in the region of exciton resonances in quantum wells and quantum dots of In0.3Ga0.7As/GaAs heterostructures 
    SYRBU, N. N.; DOROGAN, V.; DOROGAN, A.; VIERU, T.; URSAKI, V. V.; ZALAMAI, V. V. (ELSEVIER, 2012)
    The transparency, reflection and luminescence spectra of In0.3Ga0.7As structures with 8nm thickness and quantum wells limited by the barrier layer GaAs of a 9nm (upper layer) and 100nm (bottom layer) thickness had been ...
  • Order-disorder phase transition in CdAl2S4 under hydrostatic pressure 
    BURLAKOV, I. I.; RAPTIS, Y.; URSAKI, V. V.; ANASTASSAKIS, E.; TIGINYANU, I. M. (ELSEVIER, 1997)
    CdAl2S4 single crystals with the defect chalcopyrite structure have been studied by Raman spectroscopy at hydrostatic pressures up to 150 kbar. The Raman scattering spectra were found to undergo substantial changes around ...
  • Persistent photoconductivity and optical quenching of photocurrent in GaN layers under dual excitation 
    URSAKI, V. V.; TIGINYANU, I. M.; RICCI, P. C.; ANEDDA, A.; HUBBARD, S.; PAVLIDIS, D. (American Institute of Physics, 2003)
    Persistent photoconductivity (PPC) and optical quenching (OQ) of photoconductivity (PC) were investigated in a variety of n-GaN layers characterized by different carrier concentrations, luminescence characteristics, and ...
  • Phase transitions in defect chalcopyrite compounds under hydrostatic pressure 
    URSAKI, V. V.; BURLAKOV, I. I.; TIGINYANU, I. M.; RAPTIS, Y. S.; ANASTASSAKIS, E.; ANEDDA, A. (American Physical Society, 1999)
    Tetrahedrally bonded AGa2X4(A=Cd, Zn; X=S, Se) compounds crystallizing in defect chalcopyrite and defect famatinite structures have been studied by Raman spectroscopy under hydrostatic pressure. The pressure-induced changes ...
  • Photoconductive properties of HgGa2S4 
    RICCI, P. C.; ANEDDA, A.; CORPINO, R.; TIGINYANU, I. M.; URSAKI, V. V. (ELSEVIER, 2003)
    Mercury thiogallate, HgGa2S4 is a defect chalcopyrite semiconductor with the space group S42 which offers a combination of attractive properties for applications. In order to obtain information about the electron states ...
  • Photoluminescence and conductivity compensation effects in fast-electron irradiated InP epilayers 
    RADAUTSAN, S. I.; TIGINYANU, I. M.; PYSHNAYA, N. B.; URSAKI, V. V. (Springer Nature Switzerland, 1994)
    Strong interaction between residual donor impurities and radiation defects was evidenced by studying the photoluminescence spectra of bound excitons in fast-electron (E=4 MeV) irradiated n-InP epilayers. A diminution of ...
  • Photoluminescence and Raman scattering in In0.53Ga0.47As/InP:Dy 
    PODOR, Balint; VIGNAUD, D.; TIGINYANU, I. M.; CSONTOS, L.; URSAKI, V. V.; SHONTYA, V. P. (Society of Photo-Optical Instrumentation Engineers, SPIE, 1997)
    High purity In0.53Ga0.47As grown on InP by liquid phase epitaxy with small amounts of rare earth dysprosium (Dy) in the melt was investigated. The presence of Dy dramatically reduced the charge carrier and residual donor ...
  • Photoluminescence and Raman Study of Well-Aligned ZnO Nanorods on p-Si Substrate 
    URSAKI, V. V.; LUPAN, O.; TIGINYANU, I. M.; CHAI, G.; CHOW, L. (American Scientific Publishers, 2011)
    We report on optical properties of ZnO nanorods grown on p-type Si substrates by an electric-field assisted assembly technique in aqueous solutions applied at relative low temperature (96°C). The results of micro-Raman ...
  • Photoluminescence and resonant Raman scattering from ZnO-opal structures 
    URSAKI, V. V.; TIGINYANU, I. M.; ZALAMAI, V. V.; MASALOV, V. M.; SAMAROV, E. N.; EMELCHENKO, G. A.; BRIONES, F. (American Institute of Physics, 2004)
    We study photoluminescence (PL) of ZnO-opal structures excited by a 351.1 nm laser line. The structures were fabricated by infiltration of ZnO from an aqueous solution of zinc nitrate into opal matrices. The emission ...
  • Photoluminescence and resonant Raman scattering in highly conductive ZnO layers 
    ZALAMAI, V. V.; URSAKI, V. V.; RUSU, E. V.; ARABADJI, P.; TIGINYANU, I. M.; SIRBU, L. (American Institute of Physics, 2004)
    Photoluminescence (PL) and resonant Raman scattering (RRS) excited by the 351.1nm line of an Ar+ laser were studied in highly conductive ZnO layers deposited by thermal decomposition of Zn(C5H7O2)2 metalorganic compound ...
  • Photoluminescence and vibrational properties of nanostructured ZnSe templates 
    MONAICO, E.; TIGINYANU, I. M.; URSAKI, V. V.; SARUA, A.; KUBALL, M.; NEDEOGLO, D. D.; SIRKELI, V. P. (IOP Publishing, 2007)
    Electrochemical etching of pores in as-grown and doped n-type ZnSe substrates is reported. To dope the samples the as-grown semi-insulating substrates were annealed in a Zn melt containing Al impurity at concentrations ...

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