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Browsing Articole din publicaţii internaţionale by Author "ZALAMAI, V. V."

Browsing Articole din publicaţii internaţionale by Author "ZALAMAI, V. V."

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  • Optical Phonons and Chemical Bonding in TlSbS2, TlSbSe2, and Tl3SbS3 Crystals 
    STAMOV, I. G.; SYRBU, N. N.; ZALAMAI, V. V. (Elservier, 2014)
    The emission lines of bound and free excitons and their phonon replicas were observed in the luminescence spectra of ZnP2-D48 crystals doped with Mn, Sn, Cd and Sb measured at 10K. The emission lines are described by the ...
  • Optical properties and birefringence of ZnIn2S4 layered crystals 
    STAMOV, I. G.; ZALAMAI, V. V.; SYRBU, N. N.; TIRON, A. V. (Elsevier, 2020)
    Interference spectra of layered ZnIn2S4 crystals were investigated for samples of different thicknesses (7.5–900 μm). Spectral dependences of refractive indices (na and nb) for light waves with different polarizations were ...
  • Optical spectra in the region of exciton resonances in quantum wells and quantum dots of In0.3Ga0.7As/GaAs heterostructures 
    SYRBU, N. N.; DOROGAN, V.; DOROGAN, A.; VIERU, T.; URSAKI, V. V.; ZALAMAI, V. V. (ELSEVIER, 2012)
    The transparency, reflection and luminescence spectra of In0.3Ga0.7As structures with 8nm thickness and quantum wells limited by the barrier layer GaAs of a 9nm (upper layer) and 100nm (bottom layer) thickness had been ...
  • Optical spectra of TlGaS2 crystals 
    NEMERENCO, L.; SYRBU, N. N.; DOROGAN, V.; BEJAN, N. P.; ZALAMAI, V. V. (Elservier, 2016)
    Wavelength modulated reflection spectra measured at temperatures 14K and 300K in E||a and E||b polarizations for TlGaS2 crystals were investigated. The ground and excited states of excitons B2u in E||a polarization and B3u ...
  • Photoluminescence and resonant Raman scattering from ZnO-opal structures 
    URSAKI, V. V.; TIGINYANU, I. M.; ZALAMAI, V. V.; MASALOV, V. M.; SAMAROV, E. N.; EMELCHENKO, G. A.; BRIONES, F. (American Institute of Physics, 2004)
    We study photoluminescence (PL) of ZnO-opal structures excited by a 351.1 nm laser line. The structures were fabricated by infiltration of ZnO from an aqueous solution of zinc nitrate into opal matrices. The emission ...
  • Photoluminescence and resonant Raman scattering in highly conductive ZnO layers 
    ZALAMAI, V. V.; URSAKI, V. V.; RUSU, E. V.; ARABADJI, P.; TIGINYANU, I. M.; SIRBU, L. (American Institute of Physics, 2004)
    Photoluminescence (PL) and resonant Raman scattering (RRS) excited by the 351.1nm line of an Ar+ laser were studied in highly conductive ZnO layers deposited by thermal decomposition of Zn(C5H7O2)2 metalorganic compound ...
  • Photoluminescence of ZnO layers grown on opals by chemical deposition from zinc nitrate solution 
    URSAKI, V. V.; TIGINYANU, I. M.; ZALAMAI, V. V.; MASALOV, V. M.; SAMAROV, E. N.; EMELCHENKO, G. A.; BRIONES, F. (IOP Publishing, 2004)
    The emission from ZnO layers grown on the surface of bulk opals using chemical deposition is studied under excitation by the 351.1 nm line of an Ar+ laser at different excitation power densities and temperatures. The ...
  • Polariton emission from CuGaSe2 crystals 
    SYRBU, N. N.; TIGINYANU, I. M.; URSAKI, V. V.; TEZLEVAN, V. E.; ZALAMAI, V. V.; NEMERENCO, L. L. (ELSEVIER, 2005)
    The value of longitudinal–transverse splitting ωLT equal to 2.5–2.8meV and the translation mass M=2.5m0 were determined for the A exciton as a result of investigation of the reflectivity and luminescence spectra of CuGaSe2 ...
  • Raman and infrared vibrational spectra of PbGa2S4 crystal 
    ZALAMAI, V. V.; SYRBU, N. N.; BEJAN, N. P.; HIRJEU, I. (Institutul de Fizică Aplicată, 2016)
    Raman scattering spectra in different geometries at temperatures 10 - 300 K and infrared vibrational spectra were investigated for PbGa2Se crystals. Contours of reflection spectra were calculated and parameters of phonons ...
  • Random lasing in nanostructured ZnO produced from bulk ZnSe 
    URSAKI, V. V.; ZALAMAI, V. V.; BURLACU, A.; KLINGSHIRN, C.; MONAICO, E.; TIGINYANU, I. M. (IOP Publishing, 2009)
    We propose to produce three-dimensional ZnO random laser media on the basis of bulk ZnSe. Bulk ZnSe wafers are transformed into granular ZnO media by thermal treatment in oxygen ambient at temperatures in the range of ...
  • Rapid thermal annealing induced change of the mechanism of multiphonon resonant Raman scattering from ZnO nanorods 
    URSAKI, V. V.; LUPAN, O. I.; CHOW, L.; TIGINYANU, I. M.; ZALAMAI, V. V. (ELSEVIER, 2007)
    Multiphonon Resonant Raman scattering (RRS) excited by 351.1 and 363.8 nm lines of an Ar+ laser was studied at temperatures from 10 to 300 K in as-grown and rapid thermal annealed (RTA) aluminum doped ZnO nanorods synthesized ...
  • Refractive index dispersion deduced from lasing modes in ZnO microtetrapods 
    URSAKI, V. V.; ZALAMAI, V. V.; TIGINYANU, I. M.; BURLACU, A.; RUSU, E. V.; KLINGSHIRN, C. (American Institute of Physics, 2009)
    High optical quality, well end leg faceted ZnO microtetrapods sustaining lasing modes with quality factors of 2500–3000 have been grown by carbothermal chemical vapor deposition. It is shown that lasing is due to longitudinal ...
  • Resonance Raman scattering and excitonic spectra in TlInS2 crystals 
    ZALAMAI, V. V.; STAMOV, I. G.; SYRBU, N. N.; URSAKI, V. V.; DOROGAN, V. (ELSEVIER, 2015)
    The excitons ground and excited states for Ea and Eb polarizations in absorption and reflection spectra of TlInS2 crystals were detected. The fundamental parameters of excitons and bands were determined at k=0. The ...
  • Resonance Raman Scattering in TlGaSe2 Crystals 
    SYRBU, N. N.; TIRON, A. V.; ZALAMAI, V. V.; BEJAN, N. P. (Hindawi, 2017)
    The resonance Raman scattering for geometries 𝑌(𝑌𝑋)𝑍 and 𝑌(𝑍𝑋)𝑍 at temperature 10 K and infrared reflection spectra in 𝐸 ‖ 𝑎 and 𝐸 ‖ 𝑏 polarizations at 300 K were investigated. The number of 𝐴𝑎 (𝐵𝑎) and ...
  • Sharp variations in the temperature dependence of optical reflectivity from AlN/GaN heterostructures 
    URSAKI, V. V.; TIGINYANU, I. M.; SYRBU, N. N.; ZALAMAI, V. V.; HUBBARD, S.; PAVLIDIS, D. (IOP Publishing, 2002)
    Sharp variations in optical reflectivity were observed when cooling and heating AlN/GaN heterostructures on sapphire substrates between room temperature and 10 K. The reflectivity was found to decrease at a definite ...
  • Switching effects in Ag2S–Ag3AsS3 quantum dots 
    DEMIDENCO, I. V.; ZALAMAI, V. V.; STAMOV, I. G.; SYRBU, N. N. (Elservier, 2020)
    Photoluminescence and wavelength-modulated transmission spectra of Ag3AsS3 crystals were investigated at 10 K Ag3AsS3 structures with Ag2S layers were obtained by chemical and electrochemical methods. It was shown that ...
  • Up-conversion luminescence in GaSe nanocrystals 
    SYRBU, N. N.; STAMOV, I. G.; DOROGAN, A. V.; ZALAMAI, V. V. (Elservier, 2021)
    Optical properties of GaSe crystals have been investigated at wide temperature range from 10 to 300 K by help of reflection, absorption, and wavelength modulated reflection, and transmission spectra. Received data were ...
  • Up-conversion luminescence in samarium doped ZnAl2Se4 single crystals 
    ZALAMAI, V. V.; SYRBU, N. N.; RUSU, E. V.; TIRON, A.; BEJAN, N. P. (IOP Publishing, 2018)
    Photoluminescence spectra of ZnAl2Se4:Sm2+ due to the processes of charge carriers recombination from levels 5Dj, 5Lj, 5Gj and 5Hj (4f55d1) on levels 7Fj of samarium ions were investigated. The broad photoluminescence band ...

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