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Browsing Articole din publicaţii internaţionale by Title

Browsing Articole din publicaţii internaţionale by Title

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  • Polarized Retroreflection from Nanoporous III–V Semiconductors 
    PRISLOPSKI, S. Ya.; GAPONENKO, S. V.; MONAICO, E.; SERGENTU, V. V.; TIGINYANU, I. M. (Springer Nature Switzerland, 2018)
    Retroreflected light with strong linear polarization coinciding with that of the incident beams is detected from strongly absorbing nanoporous III–V semiconductors. Because of high polarization of retroreflected waves we ...
  • Politica de marketing a furnizorilor de servicii sub influența comportamentului consumatorilor pe piața comunicațiilor electronice 
    GUJUMAN, Lucia; SAVA, Lilia; VINOKUROVA, Marina; SOROCHIN, Serafima (Institutul de Cercetari Economice şi Sociale “Gheorghe Zane”, Iaşi, 2021)
    Digital transformation is about delivering technology in an efficient, accountable, transparent and audible way for the benefit of all. This involves applying technology to create a culture that embraces new digital ...
  • Politicile de stat ale Republicii Sovietice Socialiste Moldoveneşti ─ instrument de reglementare a patrimoniului arhitectural 
    OSTAPOV, Alina (Academia de Ştiinţe a Moldovei, 2019)
    Instrumentele politice sovietice erau orientate nu doare spre salvgardarea, ci şi spre popularizarea patrimoniului imobil şi relevarea importanţei acestuia, in aşa mod formandu- se o societate de o cultură inaltă. Comunitatea ...
  • Pollution of the food chain and environment by phthalates from polymers materials 
    DUCA, Gheorghe; STURZA, Rodica; LAZAKOVICH, Dmitri (Academy of Sciences of Moldova, 2017)
    During 2010-2015years were tested over 4,000 samples of food products for the presence of phthalates residue, the results of which demonstrated the problem of pollution. It was noted that the phthalate migration depends ...
  • Poly(p-phenylene vinylene)/porous GaP composite materials 
    LE RENDU, P.; NGUYEN, T. P.; LAKEHAL, M.; IP, J.; TIGINYANU, I. M.; SARUA, A.; IRMER, G. (ELSEVIER, 2001)
    We report results obtained from physical characterization of thin composite films made by mixing poly(p-phenylene vinylene) (PPV) and porous gallium phosphide (GaP) particles with different GaP concentrations. Optical ...
  • Polysilicon thin layers for photovoltaic applications 
    BUDIANU, E.; PURICA, M.; RUSU, E.; MANEA, E.; GAVRILA, R. (IEEE, 2002)
    Thin layers of polycrystalline silicon as the optically absorbing material for photovoltaic devices represents a promising way for simultaneously achieving good performances and low manufacturing cost. In this paper, the ...
  • Pore Etching in III-V and II-VI Semiconductor Compounds in Neutral Electrolyte 
    TIGINYANU, I. M.; URSAKI, V. V.; MONAICO, E.; FOCA, E.; FÖLL, H. (The Electrochemical Society, 2007)
    We propose to use a neutral electrolyte based on an aqueous solution of instead of commonly used aggressive acids or alkaline electrolytes for the purpose of electrochemical nanostructuring of and substrates. It is shown ...
  • Pores in III–V semiconductors 
    FÖLL, H.; LANGA, S.; CARSTENSEN, J.; CHRISTOPHERSEN, M.; TIGINYANU, I. M. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2003)
    The paper reviews electrochemically etched pores in III–V compound semiconductors (GaP, InP, GaAs) with emphasis on nucleation and formation mechanisms, pore geometries and morphologies, and to several instances of ...
  • Pork and bovine liver important sources of nutrients 
    GORNET, V.; SANDULACHI, E.; GORNET, E. (National Academy of Packaging, Plovdiv, 2013)
    This study includes the methodology of obtaining the functional products with high nutritional value. Nutritional quality of food is determined by: the content and quality of carbohydrates, proteins and lipids, content of ...
  • Porosification of III–V and II–VI Semiconductor Compounds 
    EDUARD, Monaico; GLEB, Colibaba; DMITRII, Nedeoglo; KORNELIUS, Nielsch (American Scientific Publishers, 2014)
    We report on a comparative study of the pore growth during anodization of a narrow-bandgap III–V compound (InAs), a medium-bandgap III–V one (InP) and wide-bandgap II–VI semiconductors (ZnSe and Zn0.4Cd0.6S). According to ...
  • Porosity-induced blueshift of photoluminescence in CdSe 
    MONAICO, E.; URSAKI, V. V.; TIGINYANU, I. M. (American Institute of Physics, 2006)
    Porous CdSe layers have been fabricated by anodic etching of n-type single crystalline substrates with different values of conductivity. The morphology and porosity of the layers thus produced were found to be controlled ...
  • Porosity-induced gain of luminescence in CdSe 
    MONAICO, E.; URSAKI, V. V.; URBIETA, A.; FERNÁNDEZ, P.; PIQUERAS, J.; BOYD, R. W.; TIGINYANU, I. M. (IOP Publishing, 2004)
    Porous CdSe layers have been produced by anodic etching of crystalline substrates in a HCl solution. Anodization under in situ UV illumination resulted in the formation of uniformly distributed parallel pores with a diameter ...
  • Porous ceramics based on hybrid inorganic tetrapodal networks for efficient photocatalysis and water purification 
    GRÖTTRUP, Jorit; SCHÜTT, Fabian; SMAZNA, Daria; LUPAN, Oleg; ADELUNG, Rainer; MISHRA, Yogendra Kumar (ELSEVIER, 2017)
    The present work demonstrates a very simple and unique strategy for efficient photocatalysis using ZnO ceramic nano- and microtetrapods synthesized by a flame transport synthesis approach. Due to their three-dimensional ...
  • Porous coatings obtained on titanium after IMPULSE – PEO processes 
    ROKOSZ, K.; HRYNIEWICZ, T.; DUDEK, Ł.; PIETRZAK, K.; RAAEN, S.; MALORNY, W.; CIUPERCA, R. (IOP Publishing, 2019)
    The surface stereometry and chemical compositions of porous coatings obtained during Plasma Electrolytic Oxidation, PEO / (Micro Arc Oxidation, MAO) processes with use of impulse regime with different frequencies were the ...
  • Porous II-VI vs. porous III-V semiconductors 
    LANGA, S.; TIGINYANU, I. M.; MONAICO, E.; FÖLL, H. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2011)
    In this work a morphological comparison of porous structures obtained by means of electrochemical etching in II-VI (ZnSe, CdSe) and III-V (InP, GaAs, GaP) semiconductors is presented. It is shown that in III-V semiconductors ...
  • Porous III–V compound semiconductors: formation, properties, and comparison to silicon 
    FÖLL, H.; CARSTENSEN, J.; LANGA, S.; CHRISTOPHERSEN, M.; TIGINYANU, I. M. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2003)
    Pore formation in n-type III–V semiconductors will be discussed and compared to pore formation in silicon. While by now many different kinds of pores were produced in silicon, the “pore zoology” in III–Vs was rather limited ...
  • Porous III–V compounds as nonlinear optical materials 
    TIGINYANU, I. M.; KRAVETSKY, I. V.; LANGA, S.; MAROWSKY, G.; MONECKE, J.; FÖLL, H. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2003)
    Electrochemical etching is shown to represent a unique approach for tailoring linear and nonlinear optical properties of III–V compounds. We demonstrate that under defined etching conditions uniformly distributed pores ...
  • Porous InP as Piezoelectric Component in Magneto-Electric Composite Sensors 
    GERNGROSS, Mark-Daniel; SPRINCEAN, Veaceslav; LEISNER, Malte; CARSTENSEN, Jürgen; FÖLL, Helmut; TIGINYANU, Ion (The Electrochemical Society, 2011)
    We report on the fabrication of cheap piezoelectric porous InP templates by electrochemical etching and additional purely chemical post-etching and on the galvanic filling of the resulting nanopore array with Ni-Fe using ...
  • Porous semiconductor compounds 
    MONAICO, Eduard; TIGINYANU, Ion; URSAKI, Veaceslav (IOP Publishing, 2020)
    In this review paper, we present a comparative analysis of the electrochemical dissolution of III–V (InP, GaAs, GaN), II–VI (ZnSe, CdSe) and SiC semiconductor compounds. The resulting morphologies are discussed, including ...
  • Porous Semiconductor Compounds with Engineered Morphology as a Platform for Various Applications 
    MONAICO, Eduard V.; MONAICO, Elena I.; URSAKI, Veaceslav V.; TIGINYANU, Ion M. (Wiley-VCH GmbH, Weinheim, 2023)
    Porous semiconductor compounds represent a class of materials which is under an intense research focus over the last years. Herein, morphologies and topologies produced by anodization in binary semiconductor compounds ...

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