Polarized Retroreflection from Nanoporous III–V Semiconductors

PRISLOPSKI, S. Ya.; GAPONENKO, S. V.; MONAICO, E.; SERGENTU, V. V.; TIGINYANU, I. M.

Polarized Retroreflection from Nanoporous III–V Semiconductors

PRISLOPSKI, S. Ya.; GAPONENKO, S. V.; MONAICO, E.; SERGENTU, V. V.; TIGINYANU, I. M.

URI: https://doi.org/10.1134/S1063782618160248
http://repository.utm.md/handle/5014/10910

Date: 2018

Abstract:

Retroreflected light with strong linear polarization coinciding with that of the incident beams is detected from strongly absorbing nanoporous III–V semiconductors. Because of high polarization of retroreflected waves we assume that coherent backscattering is the underlying physical mechanism of this phenomenon.