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Browsing Articole din publicaţii internaţionale by Author "ZALAMAI, V. V."

Browsing Articole din publicaţii internaţionale by Author "ZALAMAI, V. V."

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  • Excitonic spectra and energy band structure of ZnAl2Se4 crystals 
    SYRBU, N. N.; ZALAMAI, V. V.; TIRON, A. V.; TIGINYANU, I. M. (Elservier, 2015)
    Absorption, reflection and wavelength modulated reflection spectra were investigated in ZnAl2Se4 crystals. The energy positions of ground and excited states for three excitonic series (А, В and С) were determined. The main ...
  • Excitonic spectra and energy band structure of ZnAl2Se4 crystals 
    SYRBU, N. N.; ZALAMAI, V. V.; TIRON, A. V.; TIGINYANU, I. M. (Elsevier, 2015)
    Absorption, reflection and wavelength modulated reflection spectra were investigated in ZnAl2Se4 crystals. The energy positions of ground and excited states for three excitonic series (А, В and С) were determined. The main ...
  • Excitonic spectra in HgGa2Se4 crystals 
    SYRBU, N. N.; ZALAMAI, V. V. (Elservier, 2018)
    Ground and excited states of four excitonic series (A, B, C and D) were discovered in HgGa2Se4 crystals at 10 K. Parameters of excitons and bands were determined. An effective mass of electrons mc is equal to 0.26m0 and ...
  • Excitonic spectra of TlGaSe2 crystals 
    SYRBU, N. N.; ZALAMAI, V. V.; BEJAN, N. P.; TIRON, A. V. (Editura Academiei Romane, 2015)
    The indirect transitions in excitonic region with phonons emission in absorption spectra of TlGaSe2 crystals and ground and excited states of four excitonic series A, B, C and D were observed. The parameters of excitons ...
  • Excitonic states and electron transitions in HgGa2Se4 single crystals 
    ZALAMAI, V. V.; SYRBU, N .N.; TIRON, A. V. (Institutul de Fizică Aplicată, AŞM, 2018)
    The HgGa2Se4 crystals were grown by gas-transport method in ampoules and were plates with mirrored surfaces ~ 5x7 mm and 2 - 6 mm thickness. The plate‘s surfaces were parallel with c axis and could be recognized visually. ...
  • Excitons and energetic bands structure of ZnP2-С2h 5 crystals 
    STAMOV, I. G.; DOROGAN, A. V.; SYRBU, N. N.; ZALAMAI, V. V. (Open Science Publishers, 2014)
    Reflectivity and transmittance spectra of ZnP2-C2h 5 crystals in the region of A, B and C excitons and E>Eg had been researched. The spectra had been calculated using dispersion correlations and the Kramers-Kronig correlations. ...
  • Excitons in TlGaSe2 crystals 
    ZALAMAI, V. V.; SYRBU, N. N.; TIRON, A. V. (Academia de Ştiinţe a Moldovei, 2014)
    TaGaSe2 semiconductors crystallize as a lamellar structure and have monoclinic lattice. One of the features of these crystals is a strong anisotropy of physical characteristics due to the specificity of the crystal structure. ...
  • Free excitons in strained MOCVD-grown GaN layers 
    SYRBU, N. N.; TIGINYANU, I. M.; URSAKI, V. V.; ZALAMAI, V. V.; POPA, Veaceslav; HUBBARD, S. M.; PAVLIDIS, Dimitris (Cambridge University Press, 2003)
    GaN layers grown on sapphire substrates were characterized using high resolution optical reflectivity and absorption spectroscopy in the region of ground and excited exciton states. The main exciton parameters are deduced ...
  • Frenkel excitons and band structure in Sb2S3 single crystals 
    BERIL, S. I.; STAMOV, I. G.; TIRON, A. V.; ZALAMAI, V. V.; SYRBU, N. N. (Elservier, 2020)
    Anisotropy of optical properties of Sb2S3 single crystals was investigated at 11 and 300 K. Ground and excited states of four excitonic states (A, B, C and D) were found out. Parameters of observed excitons and bands V1 – ...
  • Frenkel excitons and the energy bands structure in crystals PbGa2S4 
    STAMOV, I. G.; SYRBU, N. N.; URSAKI, V. V.; PARVAN, V. I.; ZALAMAI, V. V. (Institutul de Fizică Aplicată al AŞM, 2012)
    On the basis of lead tiogalat (PbGa2S4) was created the active elements for lasers which allow to control the generation spectroscopic properties of lasers and parameters of the laser radiation. In these crystals were found ...
  • Guided mode lasing in ZnO nanorod structures 
    URSAKI, V. V.; ZALAMAI, V. V.; BURLACU, A.; FALLERT, J.; KLINGSHIRN, C.; KALT, H.; EMELCHENKO, G. A.; REDKIN, A. N.; GRUZINTSEV, A. N.; RUSU, E. V.; TIGINYANU, I. M. (ELSEVIER, 2009)
    Quasi-two-dimensional arrays of nearly parallel hexagonal ZnO nanorods and a three-dimensional cylindrical microstructure consisting of ZnO nanorods have been grown by low pressure chemical vapor deposition (CVD) and ...
  • Impact of size upon lasing in ZnO microtetrapods 
    ZALAMAI, V. V.; URSAKI, V. V.; TIGINYANU, I. M.; BURLACU, A.; RUSU, E. V.; KLINGSHIRN, C.; FALLERT, J.; SARTOR, J.; KALT, H. (Springer Nature Switzerland, 2010)
    High optical quality, well end leg faceted ZnO microtetrapods with leg length between 1 and 12 μm have been grown by carbothermal chemical vapor deposition. Lasing with mode quality factors of 2500–3000 is demonstrated. ...
  • Interference of birefractive waves in CdGa2S4 crystals 
    SYRBU, N. N.; TIRON, A. V.; PARVAN, V. I.; ZALAMAI, V. V.; TIGINYANU, I. M. (Elservier, 2015)
    In СdGа2S4 crystals the Fabry–Perot and birefringence interference spectra were investigated. Spectral dependences of refraction indexes for ordinary (no) and extraordinary (ne) light waves are defined. The spectral ...
  • Interference of birefractive waves in ZnAl2Se4:Co2+ crystal 
    ZALAMAI, V. V.; SYRBU, N. N.; CHESOV, R.; TIRON, A. (Institutul de Fizică Aplicată, 2016)
    The anisotropy of reflection, transmission and wavelength modulated reflection and transmission optical spectra of ZnAl2Se4 crystals doped by cobalt were investigated at 10 and 300 K. Intersections of refractive indices ...
  • The interference of birefractive waves in ZnAl2Se4:Co2+ crystal 
    SYRBU, N. N.; ZALAMAI, V. V.; TIRON, A.; TIGINYANU, I. M. (Elsevier, 2016)
    The anisotropy of reflection, transmission and wavelength modulated reflection and transmission optical spectra of ZnAl2Se4 crystals doped by cobalt were investigated at 10 and 300 K. Intersections of refractive indices ...
  • Lasing with guided modes in ZnO nanorods and nanowires 
    ZALAMAI, V. V.; URSAKI, V. V.; KLINGSHIRN, C.; KALT, H.; EMELCHENKO, G. A.; REDKIN, A. N. (Springer Nature Switzerland, 2009)
    A vertically arranged nearly parallel array of ZnO nanorods and randomly oriented nanowires has been grown by low pressure chemical vapor deposition (CVD) on silica substrates and on stainless steel gauze woven from a wire ...
  • Light emission in ZnO nanostructures 
    ZALAMAI, V. V. (Institutul de Fizică Aplicată, AŞM, 2018)
    Zinc oxide is a wide gap semiconductor material on his base are produced white and blue LED and lasers. Also zinc oxide is perspective and promising material for application in optoelectronics, nanoelectronics, photonics, ...
  • Luminescence of GaN nanocolumns obtained by photon-assisted anodic etching 
    TIGINYANU, I. M.; URSAKI, V. V.; ZALAMAI, V. V.; LANGA, S.; HUBBARD, S.; PAVLIDIS, D.; FÖLL, H. (American Institute of Physics, 2003)
    GaN nanocolumns with transverse dimensions of about 50 nm were obtained by illumination-assisted anodic etching of epilayers grown by metalorganic chemical vapor deposition on sapphire substrates. The photoluminescence ...
  • Multiphonon resonant Raman scattering in ZnO crystals and nanostructured layers 
    URSAKI, V. V.; TIGINYANU, I. M.; ZALAMAI, V. V.; RUSU, E. V.; EMELCHENKO, G. A.; MASALOV, V. M.; SAMAROV, E. N. (American Physical Society, 2004)
    Multiphonon resonant Raman scattering (RRS) was studied in unintentionally doped bulk ZnO crystals and layers, including nanostructured and highly conductive films, excited by 351.1 and 363.8 nm laser lines in the temperature ...
  • Optical characterization of AlN/GaN heterostructures 
    URSAKI, V. V.; TIGINYANU, I. M.; ZALAMAI, V. V.; HUBBARD, S. M.; PAVLIDIS, D. (American Institute of Physics, 2003)
    AlN/GaN/sapphire heterostructures with AlN gate film thickness of 3–35 nm are characterized using photoreflectivity (PR) and photoluminescence (PL) spectroscopy. Under a critical AlN film thickness, the luminescence from ...

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