Browsing Articole ştiinţifice by Author "YILMAZOGLU, O."

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Electron field emission from narrow band gap semiconductors InAs

LITOVCHENKO, V.; EVTUKH, A.; SEMENENKO, M.; GRYGORIEV, A.; YILMAZOGLU, O.; HARTNAGEL, H. L.; SIRBU, L.; TIGINYANU, I. M.; URSAKI, V. V. (IOP Publishing, 2007)

We propose to use InAs for the development of effective electron field emitters on the basis of a new technological approach for the preparation of highly textured surfaces which allows one to obtain peculiar fine rod-like ...
Internal quantum efficiency enhancement of InGaN/GaN LEDs with Mg-Si pin-doped GaN quantum barrier

KÜPPERS, F.; SIRKELI, V. P.; YILMAZOGLU, O.; AL-DAFFAIE, S.; OPREA, I.; ONG, D. S.; HARTNAGEL, H. L. (Institutul de Fizică Aplicată al AŞM, 2018)

In this work we study numerically the effect of Mg-Si pindoping of GaN quantum barrier within InGaN/GaN multi quantum wells (MQWs) on the internal quantum efficiency (IQE) of LEDs in comparison with LED devices with undoped, ...
Technology of Wide-Bandgap Diode Structures for Highfrequency Operation

MUTAMBA, K.; YILMAZOGLU, O.; COJOCARI, O.; SYDLO, C.; PAVLIDIS, D.; HARTNAGEL, H. L. (IEEE, 2006)

This paper reports on technology development aspects for GaN-based diodes in view of their application at high frequencies. The investigated devices include structures for transferred electron effects for operation at high ...

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