PODOR, Balint; VIGNAUD, D.; TIGINYANU, I. M.; CSONTOS, L.; URSAKI, V. V.; SHONTYA, V. P.
(Society of Photo-Optical Instrumentation Engineers, SPIE, 1997)
High purity In0.53Ga0.47As grown on InP by liquid phase epitaxy with small amounts of rare earth dysprosium (Dy) in the melt was investigated. The presence of Dy dramatically reduced the charge carrier and residual donor ...