IRTUM – Institutional Repository of the Technical University of Moldova

Browsing Articole ştiinţifice by Author "ONG, Duu Sheng"

Browsing Articole ştiinţifice by Author "ONG, Duu Sheng"

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  • Effect of Si-doping of the GaN barrier on the internal quantum efficiency of InGaN/GaN light-emitting diodes 
    SIRKELI, Vadim; YILMAZOGLU, Oktay; AL-DAFFAIE, S.; OPREA, I.; ONG, Duu Sheng; KUPPERS, Franko; HARTNAGEL, Hans Ludwig (Institutul de Fizică Aplicată al AŞM, 2016)
    In the past decade the AlInGaN-based light-emitting diodes (LEDs) have attracted attentions of most researchers as promising candidates to replace conventional lamps in lighting applications including general illuminations, ...
  • Efficiency enhancement of InGaN/GaN light-emitting diodes with pin-doped GaN quantum barrier 
    SIRKELI, Vadim P.; YILMAZOGLU, Oktay; AL-DAFFAIE, Shihab; OPREA, Ion; ONG, Duu Sheng; KÜPPERS, Franko; HARTNAGEL, Hans L. (IOP Publishing, 2016)
    Blue InGaN/GaN light-emitting diodes with undoped, heavily Si-doped, Si delta-doped, heavily Mg-doped, Mg delta-doped, and Mg–Si pin-doped GaN barrier are investigated numerically. The simulation results demonstrate that ...
  • Resonant tunneling transport in ZnxBe1-xSe/ZnSe/ZnyBe1-ySe asymmetric quantum structures 
    SIRKELI, Vadim P.; YILMAZOGLU, Oktay; AL-DAFFAIE, Shihab; OPREA, Ion; ONG, Duu Sheng; KÜPPERS, Franko; HARTNAGEL, Hans L. (International Society for Optics and Photonics, 2017)
    II-VI compounds are promising materials for the fabrication of room-temperature terahertz devices due to their beneficial properties like as type-I conduction band alignment, high breakdown field strength (~331 kV/cm for ...

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