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Browsing Articole ştiinţifice by Author "GARABAZHIU, V. F."

Browsing Articole ştiinţifice by Author "GARABAZHIU, V. F."

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  • Electronic processes in bismuth type doped semimetals 
    BODIUL, P. P.; GARABAZHIU, V. F.; GITSU, D. V. (IEEE, 1995)
    Properties of highly doped bismuth alloys with impurities of the VI group are investigated. Anomalous behaviour of statistical and kinetical characteristics dependence upon the impurity concentration is interpreted within ...
  • The Impurity States in Bismuth 
    BODIUL, P. P.; GARABAZHIU, V. F.; GITSU, D. V. (John Wiley & Sons, Inc., 1987)
    The influence of a lattice deformation and the degree of valency states filling of the impurity atom on the impurity subsystem behaviour is investigated. The states are found in which the electron is localized in the region ...
  • Structural instability of an impurity subsystem induced by monocrystal deformation 
    BODIUL, P. P.; GARABAZHIU, V. F.; KONDRYA, E. P.; NIKOLAYEVA, A. A. (Elsevier, 1992)
    Oscillating resistivity dependence of tensile extension was observed in thin (d < 20 Ојm) cylindrical single crystals of Bi-0.03 at% Sn alloy at 4.2 K. The resistivity dependence was influenced by sample diameter, temperature ...
  • The structure phase transition in quantum wires of bismuth under elastic tension 
    BODIUL, P. P.; GARABAZHIU, V. F.; CONDREA, E. P.; NIKOLAEVA, A. A. (Springer Nature Switzerland, 1996)
    It was established that at 4.2 K for thin (d<1μm)Bi wires there existed a complicated λ-form dependence of the resistanceR¯ on the strong elastic deformation ξ. The drastic fall in the oscillation amplitude of the ...

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