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Browsing Articole ştiinţifice by Author "EISELE, I."

Browsing Articole ştiinţifice by Author "EISELE, I."

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  • Chalcogenide based gas sensors 
    TSIULYANU, D.; MARIAN, S.; LIESS, H.-D.; EISELE, I. (National Institute of Optoelectronics, Romania, 2003)
    Evidence for direct application of the chalcogenide semiconductors for gas sensing is considered. Two kinds of sensitive thin film structures have been fabricated and studied, using both artificial dimorphite (As4S3) and ...
  • Characterization of tellurium-based films for NO2 detection 
    TSIULYANU, D.; TSIULYANU, A.; LIESS, H.-D.; EISELE, I. (Elsevier, 2005)
    Sensing characteristics of tellurium-based thin films for NO2 monitoring was studied systematically. The influence of contact materials, thermal treatment, temperature and thickness of the samples on the electrical ...
  • Effect of aging and temperature on alternating current conductivity of tellurium thin films 
    TSIULYANU, D.; MARIAN, T.; TIULEANU, A.; LIESS, H.-D.; EISELE, I. (Elsevier, 2009)
    The impedance spectra of tellurium films with interdigital platinum electrodes were investigated in air at temperatures between 10 and 50 °C. Cole–Cole analysis made it possible to assess time constants, resistance, and ...
  • Effect of annealing and temperature on the NO2 sensing properties of tellurium based films 
    TSIULYANU, D.; MARIAN, S.; LIESS, H.-D.; EISELE, I. (Elsevier, 2004)
    Influences of temperature and annealing on the electrical and sensing properties toward NO2 of tellurium based films were investigated. The annealing at temperatures more than 100°C causes a sharp decrease both of electrical ...
  • Investigation of the oxygen, nitrogen and water vapour cross-sensitivity to NO2 of tellurium-based thin films 
    TSIULYANU, D.; STRATAN, I.; TSIULYANU, A.; LIESS, H.-D.; EISELE, I. (Elsevier, 2007)
    Effect of O2, N2 and H2O to electrical behavior of tellurium-based films as well as cross-sensitivity to NO2 gas has been studied at temperatures between 20 and 70°C. The increase of oxygen partial pressure in N2+O2 carrier ...
  • A programmable metallization cell based on Ag-As2S3 
    STRATAN, I.; TSIULYANU, D.; EISELE, I. (National Institute of Optoelectronics, Romania, 2006)
    The switching properties of a Programmable Metallization Cell (PMC) structure based on the Ag-As2S3 solid electrolyte were investigated. It was found that at 120 mV of forward bias voltage the device switches from an off ...
  • Sensing Properties of Tellurium Based Thin Films to Oxygen, Nitrogen and Water Vapour 
    TSIULYANU, D.; STRATAN, I.; TSIULYANU, A.; EISELE, I. (IEEE, 2006)
    Effect of O2 , N2 and H2O to electrical behaviour of tellurium-based films has been studied at temperatures between 20 degC and 70 degC. The increase of oxygen partial pressure in NO2 + O2 carrier gas results in a nearly ...
  • A simple and high effective tellurium based sensor for NO/sub 2/ detection 
    TSIULYANU, D.; MARIAN, S.; LIESS, M.; LIESS, H.-D.; EISELE, I. (IEEE, 2004)
    A simple and stable NO/sub 2/ gas sensor device with rapid response/recovery time and low operating temperature has been developed using polycrystalline tellurium. The effect of thickness of the sample, thermal treatment ...

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