Manufacturing highly conductive ceramic targets and thin films of ZnO

Abstract

The present investigation addresses a novel approach for sintering ZnO ceramics by means of chemical vapor transport (CVT) using compound transport agents. The typical size of obtained ZnO ceramics was 25 mm in diameter and 1 mm thickness. The sintering ZnO ceramics at the use of HCl+H2+C, is the most perspective and effective method, which has the following advantages: the low sintering temperature of 1070 °C, 99% of the initial diameter, 80% of single crystal hardness, 90-95% of ZnO density, the low resistivity of 0.025 W×cm, free from powder pressing, free from attachment effect and contamination.