Exciton spectra and energy band structure of Cu2ZnSiSe4

GUC, M.; LEVCENKO, S.; DERMENJI, L.; GURIEVA, G.; SCHORR, S.; SYRBU, N. N.; ARUSHANOV, E.

dc.contributor.author	GUC, M.
dc.contributor.author	LEVCENKO, S.
dc.contributor.author	DERMENJI, L.
dc.contributor.author	GURIEVA, G.
dc.contributor.author	SCHORR, S.
dc.contributor.author	SYRBU, N. N.
dc.contributor.author	ARUSHANOV, E.
dc.date.accessioned	2020-12-28T11:29:50Z
dc.date.available	2020-12-28T11:29:50Z
dc.date.issued	2014
dc.identifier.citation	GUC, M., LEVCENKO, S., DERMENJI, L. Exciton spectra and energy band structure of Cu2ZnSiSe4. In: Journal of Alloys and Compounds, 2014, V. 587, pp. 393-397. ISSN 0925-8388.	en_US
dc.identifier.uri	https://doi.org/10.1016/j.jallcom.2013.10.172
dc.identifier.uri	http://repository.utm.md/handle/5014/12325
dc.description	Access full text – https://doi.org/10.1016/j.jallcom.2013.10.172	en_US
dc.description.abstract	Exciton spectra are studied in Cu2ZnSiSe4 single crystals at 10 and 300K by means of reflection spectroscopy. The exciton parameters, dielectric constant and free carriers effective masses are deduced from experimental spectra by calculations in the framework of a model taking into account the spatial dispersion and the presence of a dead-layer. The structure found in the reflectivity was analyzed and related to the theoretical electronic band structure of close related Cu2ZnSiS4 semiconductor.	en_US
dc.language.iso	en	en_US
dc.publisher	Elservier	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	single crystals	en_US
dc.subject	crystals	en_US
dc.subject	polarized reflectivity	en_US
dc.subject	reflectivity	en_US
dc.subject	exciton spectra	en_US
dc.subject	electronic bands	en_US
dc.subject	bands	en_US
dc.title	Exciton spectra and energy band structure of Cu2ZnSiSe4	en_US
dc.type	Article	en_US