Raman scattering study of Zn/sup +//P/sup +/ co-implanted GaAs single crystals

URSAKI, V. V.; ICHIZLI, V. M.; TIGINYANU, I. M.; TERLETSKII, A. I.; CALUJA, Y. I.; RADAUTSAN, S. I.

dc.contributor.author	URSAKI, V. V.
dc.contributor.author	ICHIZLI, V. M.
dc.contributor.author	TIGINYANU, I. M.
dc.contributor.author	TERLETSKII, A. I.
dc.contributor.author	CALUJA, Y. I.
dc.contributor.author	RADAUTSAN, S. I.
dc.date.accessioned	2020-11-18T09:57:10Z
dc.date.available	2020-11-18T09:57:10Z
dc.date.issued	1995
dc.identifier.citation	URSAKI, V. V., ICHIZLI, V. M., TIGINYANU, I. M. et al. Raman scattering study of Zn/sup +//P/sup +/ co-implanted GaAs single crystals. In: International Semiconductor Conference : proc., 11-14 Oct. 1995, Sinaia, Romania, 1995, pp. 99-102.	en_US
dc.identifier.uri	https://doi.org/10.1109/SMICND.1995.494873
dc.identifier.uri	http://repository.utm.md/handle/5014/11552
dc.description	Acces ful text: https://doi.org/10.1109/SMICND.1995.494873	en_US
dc.description.abstract	The activation efficiency of zinc impurity co-implanted with P/sup +/ ions in GaAs single crystals was studied by Raman scattering (RS) at phonon-plasmon coupled modes. P/sup +/ co-implantation has been found to result in impurity activation improvement, the optimum electrical parameters of implanted layers being achieved after sample annealing at 700/spl deg/C.	en_US
dc.language.iso	en	en_US
dc.publisher	IEEE	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	single crystals	en_US
dc.subject	crystals	en_US
dc.subject	Raman scattering	en_US
dc.subject	implanted layers	en_US
dc.title	Raman scattering study of Zn/sup +//P/sup +/ co-implanted GaAs single crystals	en_US
dc.type	Article	en_US