Photocatalytic indium-tantalum-oxide and its photoluminescence

KANTSER, V.; MUNTEAN, S.; ZHITAR, V.; VOLODINA, G.; KAPLIN, V.; URSAKI, V.

dc.contributor.author	KANTSER, V.
dc.contributor.author	MUNTEAN, S.
dc.contributor.author	ZHITAR, V.
dc.contributor.author	VOLODINA, G.
dc.contributor.author	KAPLIN, V.
dc.contributor.author	URSAKI, V.
dc.date.accessioned	2020-11-18T09:33:53Z
dc.date.available	2020-11-18T09:33:53Z
dc.date.issued	2003
dc.identifier.citation	KANTSER, V., MUNTEAN, S., ZHITAR, V. et al. Photocatalytic indium-tantalum-oxide and its photoluminescence. In: Moldavian Journal of the Physical Sciences. 2003, nr. 3-4, pp. 286-290. ISSN 1810-648X.	en_US
dc.identifier.uri	http://repository.utm.md/handle/5014/11551
dc.description.abstract	Both bulk ceramic and powder like samples In0,9Ni0,1TaO4 photocatalytic semiconductor oxides have been obtained by the method of solid phase reactions. The photocatalytic activity on water splitting has been investigated using for identification of hydrogen yield a chemoresistive gas sensor ROGS-3. For the fist time the material photoluminescence (PL) properties have been studied in the wide - 350-850 nm and narrow - 360- 410 nm ranges of the light spectrum and some spectrum peculiarities at T=10 and 300 K are observed. The correlation between photocatalytic action of In0,9Ni0,1TaO4 on water splitting processes and its photoluminescence peculiarities has been established. The materials with high photocatalytic activity are characterized by PL peak increase at 450 nm and the maximum attenuation at 660 nm.	en_US
dc.language.iso	en	en_US
dc.publisher	Institutul de Inginerie Electronică şi Nanotehnologii "D. Ghiţu" al AŞM	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	semiconductor oxides	en_US
dc.subject	photoluminescence	en_US
dc.title	Photocatalytic indium-tantalum-oxide and its photoluminescence	en_US
dc.type	Article	en_US