Porous morphologies in Si, III-V and II-VI compounds: a comparative study

LANGA, S.; MONAICO, E.; FÖLL, H.; TIGINYANU, I. M.

dc.contributor.author	LANGA, S.
dc.contributor.author	MONAICO, E.
dc.contributor.author	FÖLL, H.
dc.contributor.author	TIGINYANU, I. M.
dc.date.accessioned	2020-10-28T11:01:47Z
dc.date.available	2020-10-28T11:01:47Z
dc.date.issued	2009
dc.identifier.citation	LANGA, S., MONAICO, E., FÖLL, H. Porous morphologies in Si, III-V and II-VI compounds: a comparative study. In: Microelectronics and Computer Science: proc. of the 6th intern. Conf., September, 2009. Chişinău, 2009, pp. 175-178.	en_US
dc.identifier.uri	http://repository.utm.md/handle/5014/10922
dc.description.abstract	Porous morphologies obtained during the anodization of semiconductors are mainly determined by particular characteristics of the semiconductor-electrolyte interfaces and the bulk properties of the semiconductor itself. This paper discusses the types of porous structures obtained in Si, III-V and II-VI semiconductors: crystallographically oriented pores, current line oriented pores and fractal pores.	en_US
dc.language.iso	en	en_US
dc.publisher	Technical University of Moldova	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	anodization	en_US
dc.subject	semiconductors	en_US
dc.subject	porous structures	en_US
dc.subject	pores	en_US
dc.title	Porous morphologies in Si, III-V and II-VI compounds: a comparative study	en_US
dc.type	Article	en_US