Thermal analysis of the composition of gallium and sulfur oxides obtained by thermal oxidation of gallium (III) sulfide

Abstract

Oxides of both Ga and In elements (Ga2O3, In2O3) are wide bandgap materials and have molecular gas adsorption properties, such as CO and CO2. They are materials with semiconductor properties, which doping with chemical elements changes the type of major charge carriers and also the characteristic properties. By thermal annealing of both Ga and In chalcogenides (Ga2S3, GaSe, Ga2Se3, In2S3, In2Se3, InSe) in a wide temperature range under normal atmospheres, their dissociation occurs with formation of Ga, In, Se, and S oxides. Both semiconductor and adsorbing properties of the synthesized oxides depends on their structure and composition. In this work, we study the influence of technological oxidation regime, in normal atmosphere, of Ga2S3 singlecrystals with own structural defects on the oxides composition, optical and photoelectric properties, as well as the adsorption of the gases formed as a result of liquid fuel (gasoline) combustion. Ga2S3 singlecrystals have been grown by chemical vapour transport (I2) of the material synthetized from Ga (5N) and S (5N) elements. Thermal annealing was carried out in normal atmosphere for 1-24 hours, at temperatures from 770K up to 1230K.