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Micro-oxidation of silicon surfaces by means of electrical discharges in impulse

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dc.contributor.author TOPALA, P.
dc.contributor.author MELNIC, V.
dc.contributor.author GUZGAN, D.
dc.date.accessioned 2020-09-30T14:41:34Z
dc.date.available 2020-09-30T14:41:34Z
dc.date.issued 2013
dc.identifier.citation TOPALA, P., MELNIC, V., GUZGAN, D. Micro-oxidation of silicon surfaces by means of electrical discharges in impulse. In: Fizică şi tehnică: procese, modele, experimente. 2013, nr. 2, pp. 32-36. ISSN 1857-0437. en_US
dc.identifier.issn 1857-0437
dc.identifier.uri http://repository.utm.md/handle/5014/10228
dc.description.abstract The paper presents the results of the theoretical and experimental study of the formation of oxide films on silicon surfaces by means of rapid thermal oxidation in plasma caused by electrical discharges in impulse. The oxidation process has been carried out under normal atmospheric conditions. It has been shown that the properties of the oxide films depend on the processing power as well as the electrode base materials. en_US
dc.description.abstract Articolul prezintă rezultatele studiul teoretico-experimental privind formarea peliculelor de oxizi pe suprafeţele din siliciu cu ajutorul oxidării termice rapide în plasma cauzată de descărcările electrice în impuls. Procesul de oxidare a fost obţinut în atmosferă în condiţii normale. Se arată că proprietăţile peliculelor de oxizi depind de puterea disipată pe suprafaţa prelucrată, precum şi de materialul de bază a electrozilor.
dc.language.iso en en_US
dc.publisher Universitatea de Stat „Alecu Russo“ din Bălţi en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject pelicule de oxizi en_US
dc.subject oxidarea suprafeţelor en_US
dc.subject oxidation of silicon surfaces en_US
dc.subject oxide films en_US
dc.title Micro-oxidation of silicon surfaces by means of electrical discharges in impulse en_US
dc.type Article en_US


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