dc.contributor.author | MUNTYANU, F. M. | |
dc.contributor.author | GILEWSKI, A. | |
dc.contributor.author | ZALESKI, A. J. | |
dc.contributor.author | CHISTOL, V. | |
dc.contributor.author | ROGACKI, K. | |
dc.date.accessioned | 2020-09-09T08:20:15Z | |
dc.date.available | 2020-09-09T08:20:15Z | |
dc.date.issued | 2016 | |
dc.identifier.citation | MUNTYANU, F. M., GILEWSKI, A., ZALESKI, A. J., CHISTOL, V., ROGACKI, K. Superconducting features at Bi-Sb twisting crystallite interfaces. In: Materials Science and Condensed Matter Physics : proc. of the 8th intern. conf. Sept. 12-16 2016, Chişinău, 2016, p. 230. ISBN 978-9975-9787-1-2. | en_US |
dc.identifier.isbn | 978-9975-9787-1-2 | |
dc.identifier.uri | http://repository.utm.md/handle/5014/9314 | |
dc.description | Sursa: Conferința – "International Conference on Materials Science and Condensed Matter Physics", 8-th Edition Chişinău, Moldova, 12-16 septembrie 2016.→ https://ibn.idsi.md/collection_view/143 | en_US |
dc.description.abstract | We present the results of the study of quantum oscillations, magnetic and superconducting properties of the twisting bicrystals of 3D topological insulator Bi1-xSbx (0.07 < x < 0.15) at low temperatures and in magnetic fields up to 400 kOe.It has been found that the small crystallite disorientation angle (SDA) interfaces, which consist of a solitary central part ( thickness of about 60 nm) and two similaradjacent layers (~20 nm) on both sides of it, exhibit two superconducting transitions with critical temperature Tc~ (3.7 - 4.6)K and Tc~ (8.3 – 21)K. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Institutul de Fizică Aplicată | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | magnetic properties | en_US |
dc.subject | superconducting properties | en_US |
dc.subject | crystallite interfaces | en_US |
dc.title | Superconducting features at Bi-Sb twisting crystallite interfaces | en_US |
dc.type | Article | en_US |
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