Formation of Tetrahedron-Like Pores during Anodic Etching of (100) Oriented n-GaAs

LANGA, S.; CARSTENSEN, J.; TIGINYANU, I. M.; CHRISTOPHERSEN, M.; FÖLL, H.

dc.contributor.author	LANGA, S.
dc.contributor.author	CARSTENSEN, J.
dc.contributor.author	TIGINYANU, I. M.
dc.contributor.author	CHRISTOPHERSEN, M.
dc.contributor.author	FÖLL, H.
dc.date.accessioned	2020-09-09T07:00:34Z
dc.date.available	2020-09-09T07:00:34Z
dc.date.issued	2002
dc.identifier.citation	LANGA, S., CARSTENSEN, J., TIGINYANU, I. M. et al. Formation of Tetrahedron-Like Pores during Anodic Etching of (100) Oriented n-GaAs. In: Electrochemical and Solid-State Letters. 2002, V. 5, NR. 1, pp. C14. ISSN 1099-0062.	en_US
dc.identifier.issn	1099-0062
dc.identifier.uri	https://doi.org/10.1149/1.1423803
dc.identifier.uri	http://repository.utm.md/handle/5014/9308
dc.description	Access full text - https://doi.org/10.1149/1.1423803	en_US
dc.description.abstract	The morphology of porous layers obtained by electrochemical etching of (100) oriented n-GaAs substrates in an aqueous solution of HCl was studied. At low anodic current densities, up to 5 mA/cm2, pores in the form of triangular prisms grew along 111 crystallographic directions. For larger current densities the shape of the pores did not suffer any changes at the beginning of the process, while after a definite period of time the morphology of pores changed drastically to chains of tetrahedral voids with {111} facets.	en_US
dc.language.iso	en	en_US
dc.publisher	The Electrochemical Society	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	porous layers	en_US
dc.subject	electrochemical etching	en_US
dc.title	Formation of Tetrahedron-Like Pores during Anodic Etching of (100) Oriented n-GaAs	en_US
dc.type	Article	en_US