GaAs nanowires obtained via electrochemical etching of bulk substrates

Abstract

Technological conditions for obtaining InP nanomembranes and nanowires by means of fast anodic etching of bulk substrates have been recently elaborated. Electrochemical etching is an easy, cost-effective, and very fast technology, as compared to other methods. Micrometer long InP nanowires can be obtained in several seconds. Other methods employed for growing semiconductor nanowires have a drawback of incorporating various crystallographic defects due to impurities from electrolytes, precursors and different transport gases in the growth process. The main advantage of electrochemical etching technology relies on the fact that the quality of the produced nanowires and ultrathin walls is similar to that of the initial crystalline substrate.