Mechanical behavior at point contact of CdGa2S4 and CdGa2Se4

PYRTSAC, C.; SHIKIMAKA, O.; GRABCO, D.; PRISACARU, A.; PARVAN, V.; URSAKI, V.

dc.contributor.author	PYRTSAC, C.
dc.contributor.author	SHIKIMAKA, O.
dc.contributor.author	GRABCO, D.
dc.contributor.author	PRISACARU, A.
dc.contributor.author	PARVAN, V.
dc.contributor.author	URSAKI, V.
dc.date.accessioned	2020-09-08T06:18:21Z
dc.date.available	2020-09-08T06:18:21Z
dc.date.issued	2014
dc.identifier.citation	PYRTSAC, C., SHIKIMAKA, O., GRABCO, D. et al. DSCM 19p mechanical behavior at point contact of CdGa2S4 and CdGa2Se4. In: Materials Science and Condensed Matter Physics: mater. a 7-a conf. intern., 16-19 septembrie, 2014. Chişinău, 2014, p. 153.	en_US
dc.identifier.uri	http://repository.utm.md/handle/5014/9266
dc.description	Sursa: Conferința –"Materials Science and Condensed Matter Physics", Chișinău, Moldova, 16-19 septembrie 2014.→ https://ibn.idsi.md/collection_view/169	en_US
dc.description.abstract	In this study the deformation peculiarities of CdGa2S4 and CdGa2Se4 subjected to point contact (indentation) were investigated. By applying a depth-sensing nanoindentation technique with Berkovich pyramidal diamond indenter, the hardness (H) and Young‟s modulus (E) were evaluated. The values of H and E show an increase with load decrease for both compounds that can be the result of the known indentation size effect.	en_US
dc.language.iso	en	en_US
dc.publisher	Academia de Ştiinţe a Moldovei	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	semiconductor compounds	en_US
dc.title	Mechanical behavior at point contact of CdGa2S4 and CdGa2Se4	en_US
dc.type	Article	en_US