Excitons in TlGaSe2 crystals

ZALAMAI, V. V.; SYRBU, N. N.; TIRON, A. V.

dc.contributor.author	ZALAMAI, V. V.
dc.contributor.author	SYRBU, N. N.
dc.contributor.author	TIRON, A. V.
dc.date.accessioned	2020-09-07T14:13:19Z
dc.date.available	2020-09-07T14:13:19Z
dc.date.issued	2014
dc.identifier.citation	ZALAMAI, V. V., SYRBU, N. N., TIRON, A. V. Excitons in TlGaSe2 crystals. In: Materials Science and Condensed Matter Physics: mater. a 7-a conf. intern., 16-19 septembrie, 2014. Chişinău, 2014, p. 90.	en_US
dc.identifier.uri	http://repository.utm.md/handle/5014/9263
dc.description	Sursa: Conferința –"Materials Science and Condensed Matter Physics", Chișinău, Moldova, 16-19 septembrie 2014.→ https://ibn.idsi.md/collection_view/169	en_US
dc.description.abstract	TaGaSe2 semiconductors crystallize as a lamellar structure and have monoclinic lattice. One of the features of these crystals is a strong anisotropy of physical characteristics due to the specificity of the crystal structure. The influence of temperature and pressure on the optical spectra near the absorption edge in TlGaS2 crystals were studied.	en_US
dc.language.iso	en	en_US
dc.publisher	Academia de Ştiinţe a Moldovei	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	crystals	en_US
dc.subject	semiconductors	en_US
dc.title	Excitons in TlGaSe2 crystals	en_US
dc.type	Article	en_US