Single crystalline 2D porous arrays obtained by self organization in n-Inp

LANGA, S.; CHRISTOPHERSEN, M.; CARSTENSEN, J.; TIGINYANU, I. M.; FÖLL, H.

dc.contributor.author	LANGA, S.
dc.contributor.author	CHRISTOPHERSEN, M.
dc.contributor.author	CARSTENSEN, J.
dc.contributor.author	TIGINYANU, I. M.
dc.contributor.author	FÖLL, H.
dc.date.accessioned	2020-09-01T13:08:56Z
dc.date.available	2020-09-01T13:08:56Z
dc.date.issued	2003
dc.identifier.citation	LANGA, S., CHRISTOPHERSEN, M., CARSTENSEN, J.et al. Single crystalline 2D porous arrays obtained by self organization in n-Inp. In: Physica Status Solidi (a). 2003, V. 197, Nr. 1, pp. 77-82. ISSN ‎1862-6319.	en_US
dc.identifier.issn	1862-6319
dc.identifier.uri	https://doi.org/10.1002/pssa.200306471
dc.identifier.uri	http://repository.utm.md/handle/5014/9150
dc.description	Access full text - https://doi.org/10.1002/pssa.200306471	en_US
dc.description.abstract	Self organization is a rather common phenomenon during pore formation in III–V semiconductors. The so called tetrahedron-like pores, the domains of crystallographically oriented pores in n-GaAs, or the macroscopic voltage oscillations in n-InP at high constant current densities are examples of a self organization process. In this paper we will discuss two-dimensional arrays of pores in n-InP with the unique property that they may form a single crystal as a result of a self organization process. The reasons for this long range order and its dependence on the etching conditions will be discussed.	en_US
dc.language.iso	en	en_US
dc.publisher	WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	semiconductors	en_US
dc.subject	self organization	en_US
dc.subject	pores formation	en_US
dc.subject	pores	en_US
dc.subject	single crystals	en_US
dc.subject	crystals	en_US
dc.title	Single crystalline 2D porous arrays obtained by self organization in n-Inp	en_US
dc.type	Article	en_US