Porous III–V compound semiconductors: formation, properties, and comparison to silicon

FÖLL, H.; CARSTENSEN, J.; LANGA, S.; CHRISTOPHERSEN, M.; TIGINYANU, I. M.

dc.contributor.author	FÖLL, H.
dc.contributor.author	CARSTENSEN, J.
dc.contributor.author	LANGA, S.
dc.contributor.author	CHRISTOPHERSEN, M.
dc.contributor.author	TIGINYANU, I. M.
dc.date.accessioned	2020-09-01T11:04:04Z
dc.date.available	2020-09-01T11:04:04Z
dc.date.issued	2003
dc.identifier.citation	FÖLL, H., CARSTENSEN, J., LANGA, S. et al. Porous III–V compound semiconductors: formation, properties, and comparison to silicon. In: Physica Status Solidi (a). 2003, V. 197, Nr. 1, pp. 61-70. ISSN 1862-6319.	en_US
dc.identifier.issn	1862-6319
dc.identifier.uri	https://doi.org/10.1002/pssa.200306469
dc.identifier.uri	http://repository.utm.md/handle/5014/9147
dc.description	Access full text - https://doi.org/10.1002/pssa.200306469	en_US
dc.description.abstract	Pore formation in n-type III–V semiconductors will be discussed and compared to pore formation in silicon. While by now many different kinds of pores were produced in silicon, the “pore zoology” in III–Vs was rather limited until recently. This paper will briefly review the specific pore morphologies in some compound semiconductors, nucleation and formation mechanisms, the relation to comparable Si pores (including some new observation in Si), and the particularly striking features that pores in III-semiconductors exhibit many features of self organization and on occasion peculiar luminescence properties.	en_US
dc.language.iso	en	en_US
dc.publisher	WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	semiconductors	en_US
dc.subject	silicon	en_US
dc.subject	pore formation	en_US
dc.title	Porous III–V compound semiconductors: formation, properties, and comparison to silicon	en_US
dc.type	Article	en_US