dc.contributor.author | LANGA, S. | |
dc.contributor.author | TIGINYANU, I. M. | |
dc.contributor.author | CARSTENSEN, J. | |
dc.contributor.author | CHRISTOPHERSEN, M. | |
dc.contributor.author | FÖLL, H. | |
dc.date.accessioned | 2020-09-01T07:24:17Z | |
dc.date.available | 2020-09-01T07:24:17Z | |
dc.date.issued | 1999 | |
dc.identifier.citation | LANGA, S., TIGINYANU, I. M., CARSTENSEN, J. et al. Formation of Porous Layers with Different Morphologies during Anodic Etching of n-InP. In: Electrochemical and Solid-State Letters. 1999, V. 3, Nr. 11, pp. 514. ISSN 1099-0062. | en_US |
dc.identifier.issn | 1099-0062 | |
dc.identifier.uri | https://doi.org/10.1149/1.1391195 | |
dc.identifier.uri | http://repository.utm.md/handle/5014/9142 | |
dc.description | Access full text - https://doi.org/10.1149/1.1391195 | en_US |
dc.description.abstract | Two different morphologies of porous layers were observed in (100)-oriented anodically etched in an aqueous solution of . At high current density anodization leads to the formation of so-called current-line oriented pores. When the current density decreased to values lower than the morphology of the porous layers sharply changed and the pores began to grow along definite 111 crystallographic directions. | en_US |
dc.language.iso | en | en_US |
dc.publisher | The Electrochemical Society | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | porous layers | en_US |
dc.subject | anodically etched | en_US |
dc.subject | layers | en_US |
dc.title | Formation of Porous Layers with Different Morphologies during Anodic Etching of n-InP | en_US |
dc.type | Article | en_US |
The following license files are associated with this item: