Pores in III–V semiconductors

FÖLL, H.; LANGA, S.; CARSTENSEN, J.; CHRISTOPHERSEN, M.; TIGINYANU, I. M.

dc.contributor.author	FÖLL, H.
dc.contributor.author	LANGA, S.
dc.contributor.author	CARSTENSEN, J.
dc.contributor.author	CHRISTOPHERSEN, M.
dc.contributor.author	TIGINYANU, I. M.
dc.date.accessioned	2020-09-01T06:57:01Z
dc.date.available	2020-09-01T06:57:01Z
dc.date.issued	2003
dc.identifier.citation	FÖLL H., LANGA S., CARSTENSEN J. et al. Pores in III–V semiconductors. In: Advanced Materials. 2003, V. 15, Nr. 3, pp. 183-198. ISSN 1521-4095.	en_US
dc.identifier.issn	1521-4095
dc.identifier.uri	https://doi.org/10.1002/adma.200390043
dc.identifier.uri	http://repository.utm.md/handle/5014/9141
dc.description	Access full text - https://doi.org/10.1002/adma.200390043	en_US
dc.description.abstract	The paper reviews electrochemically etched pores in III–V compound semiconductors (GaP, InP, GaAs) with emphasis on nucleation and formation mechanisms, pore geometries and morphologies, and to several instances of self-organization. Self- organization issues include the formation of single-crystalline two-dimensional hexagonal arrays of pores with lattice constants as small as 100 nm found in InP, synchronized and unsynchronized diameter oscillations coupled to current and voltage oscillations, and pore domain formation. The findings are discussed in relation to pores observed in silicon. Some novel properties of the porous layers obtained in III–V compounds are briefly described.	en_US
dc.language.iso	en	en_US
dc.publisher	WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	semiconductors	en_US
dc.subject	etched pores	en_US
dc.subject	electrochemically etched pores	en_US
dc.subject	pores	en_US
dc.title	Pores in III–V semiconductors	en_US
dc.type	Article	en_US