Effect of rapid thermal annealing on properties of ZnO:Ag nanostructures

Abstract

Previous reports clearly demonstrates that Ag-doping of ZnO lead to the diminution of the concentration of donor defects for the compensation of the n-type conductivity [1], while thermal annealing (TA) and rapid treatment (RTA) can lead to efficient change in morphology of doped ZnO nanostructured films [4]. Recently, our group has demonstrated efficient Ag-doping and growth of ZnO:Ag NWs by electrochemical method [1,5] and of thin films. Based on individual ZnO:Ag NWs with 150 nm radius the multifunctional sensor devices for fast room temperature hydrogen gas and ultraviolet (UV) light detection were fabricated using FIB/SEM system [1]. The sensors demonstrated the response of ~ 1.6 to 100 ppm of hydrogen gas with relatively fast response and complete recovery of signal [1]. Such response is comparable with those of nanosensors based on pristine ZnO NWs with much lower diameter of ≈ 100 nm, which demonstrate the efficiency of Ag-doping for sensing properties enhancement [1]. In the case of ZnO:Ag nanostructured films synthesized via a simple synthesis from chemical solutions (SCS) approach [4], the RTA and TA treatments at different temperatures and in different inert atmospheres showed efficient change in morphology and defect concentration leading to the improvement of UV and gas sensing properties. This research was supported by STCU within project 6229.