Photoluminescence and Raman Study of Well-Aligned ZnO Nanorods on p-Si Substrate

URSAKI, V. V.; LUPAN, O.; TIGINYANU, I. M.; CHAI, G.; CHOW, L.

dc.contributor.author	URSAKI, V. V.
dc.contributor.author	LUPAN, O.
dc.contributor.author	TIGINYANU, I. M.
dc.contributor.author	CHAI, G.
dc.contributor.author	CHOW, L.
dc.date.accessioned	2020-08-10T10:21:28Z
dc.date.available	2020-08-10T10:21:28Z
dc.date.issued	2011
dc.identifier.citation	URSAKI V. V. LUPAN O. TIGINYANU I. M. et al. Photoluminescence and Raman Study of Well-Aligned ZnO Nanorods on p-Si Substrate. In: Journal of Nanoelectronics and Optoelectronics. 2011, Vol. 6, Nr. 4, pp. 473-477. ISSN 1555-130X. eISSN: 1555-131.	en_US
dc.identifier.issn	1555-130X
dc.identifier.issn	1555-131
dc.identifier.uri	https://doi.org/10.1166/jno.2011.1198
dc.identifier.uri	http://repository.utm.md/handle/5014/9046
dc.description	Access full text - https://doi.org/10.1166/jno.2011.1198	en_US
dc.description.abstract	We report on optical properties of ZnO nanorods grown on p-type Si substrates by an electric-field assisted assembly technique in aqueous solutions applied at relative low temperature (96°C). The results of micro-Raman study are indicative of high crystalline quality of the produced nanorods. The analysis of the photoluminescence properties of the material demonstrates the possibility to control the free carrier concentration by post-growth thermal treatment leading to the formation of compensating centers, while the crystalline quality of the material is not affected.	en_US
dc.language.iso	en	en_US
dc.publisher	American Scientific Publishers	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	electric fields	en_US
dc.subject	photoluminescence	en_US
dc.subject	self-assembly	en_US
dc.subject	nanorods	en_US
dc.title	Photoluminescence and Raman Study of Well-Aligned ZnO Nanorods on p-Si Substrate	en_US
dc.type	Article	en_US