Nitrogen oxides and ammonia sensing characteristics of SILAR deposited ZnO thin film

LUPAN, O. I.; SHISHIYANU, S. T.; SHISHIYANU, T. S.

dc.contributor.author	LUPAN, O. I.
dc.contributor.author	SHISHIYANU, S. T.
dc.contributor.author	SHISHIYANU, T. S.
dc.date.accessioned	2020-06-19T12:05:14Z
dc.date.available	2020-06-19T12:05:14Z
dc.date.issued	2007
dc.identifier.citation	LUPAN, O. I., SHISHIYANU, S. T., SHISHIYANU, T. S. Nitrogen oxides and ammonia sensing characteristics of SILAR deposited ZnO thin film. In: Superlattices and Microstructures., 2007, Vol. 42, Iss. 1–6, pp. 375-378. ISSN 0749-6036.	en_US
dc.identifier.issn	0749-6036
dc.identifier.uri	https://doi.org/10.1016/j.spmi.2007.04.009
dc.identifier.uri	http://repository.utm.md/handle/5014/8965
dc.description	Access full text - https://doi.org/10.1016/j.spmi.2007.04.009	en_US
dc.description.abstract	Pure and Sn, Ni doped ZnO thin films were deposited on glass substrates using a novel successive ionic layer adsorption and reaction (SILAR) method at room temperature. Microstructures of the deposited films were optimized by adjusting growth parameters. The variation in resistivity of the ZnO film sensors was performed with rapid photothermal processing (RPP). The effect of rapid photothermal processing was found to have an important role in ZnO based sensor sensitivity to NO2, NH3. While the undoped ZnO film surface exhibited higher NH3 sensitivity than that of NO2, an enhanced NO2 sensitivity was noticed for the ZnO films doped with Sn and higher NH3 sensitivity was obtained by Ni doping.	en_US
dc.language.iso	en	en_US
dc.publisher	ELSEVIER	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	thin films	en_US
dc.subject	glass substrates	en_US
dc.title	Nitrogen oxides and ammonia sensing characteristics of SILAR deposited ZnO thin film	en_US
dc.type	Article	en_US