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Photoluminescence of chemical bath deposited ZnO:Al films treated by rapid thermal annealing

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dc.contributor.author SHISHIYANU, S. T.
dc.contributor.author LUPAN, O. I.
dc.contributor.author MONAICO, E. V.
dc.contributor.author URSAKI, V. V.
dc.contributor.author SHISHIYANU, T. S.
dc.contributor.author TIGINYANU, I. M.
dc.date.accessioned 2020-06-19T09:55:41Z
dc.date.available 2020-06-19T09:55:41Z
dc.date.issued 2005
dc.identifier.citation SHISHIYANU, S. T., LUPAN, O. I., MONAICO, E. V. et al. Rapid thermal annealing induced change of the mechanism of multiphonon resonant Raman scattering from ZnO nanorods. In: Thin Solid Films, 2005, Vol. 488, Iss. 1–2, pp. 15-19. ISSN 0040-6090. en_US
dc.identifier.issn 0040-6090
dc.identifier.uri https://doi.org/10.1016/j.tsf.2005.04.004
dc.identifier.uri http://repository.utm.md/handle/5014/8958
dc.description Access full text - https://doi.org/10.1016/j.tsf.2005.04.004 en_US
dc.description.abstract Aluminum-doped zinc oxide (ZnO:Al) films fabricated by chemical bath deposition are characterized using scanning electron microscopy and photoluminescence (PL) spectroscopy. The impact of rapid thermal annealing (RTA) upon the morphology and luminescence characteristics of ZnO:Al layers is studied in an annealing temperature interval up to 650 °C. The as deposited films consist of high quality microcrystalline grains surrounded by a material of poor quality. RTA at temperatures around 650 °C proves to increase the grain size, enhance the ultraviolet PL with simultaneous suppression of the visible luminescence, and activate the Al donor impurities. en_US
dc.language.iso en en_US
dc.publisher ELSEVIER en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject zinc oxide en_US
dc.subject rapid thermal annealing en_US
dc.subject thermal annealing en_US
dc.subject luminescence en_US
dc.subject surface morphology en_US
dc.title Photoluminescence of chemical bath deposited ZnO:Al films treated by rapid thermal annealing en_US
dc.type Article en_US


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