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Rapid thermal annealing induced change of the mechanism of multiphonon resonant Raman scattering from ZnO nanorods

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dc.contributor.author URSAKI, V. V.
dc.contributor.author LUPAN, O. I.
dc.contributor.author CHOW, L.
dc.contributor.author TIGINYANU, I. M.
dc.contributor.author ZALAMAI, V. V.
dc.date.accessioned 2020-06-19T09:02:11Z
dc.date.available 2020-06-19T09:02:11Z
dc.date.issued 2007
dc.identifier.citation URSAKI, V. V., LUPAN, O. I., CHOW, L. et al. Rapid thermal annealing induced change of the mechanism of multiphonon resonant Raman scattering from ZnO nanorods. In: Solid State Cpmmunications. 2007, Vol. 143, Iss. 8–9, pp. 437-441. ISSN 0038-1098. en_US
dc.identifier.issn 0038-1098
dc.identifier.uri https://doi.org/10.1016/j.ssc.2007.06.001
dc.identifier.uri http://repository.utm.md/handle/5014/8957
dc.description Access full text - https://doi.org/10.1016/j.ssc.2007.06.001 en_US
dc.description.abstract Multiphonon Resonant Raman scattering (RRS) excited by 351.1 and 363.8 nm lines of an Ar+ laser was studied at temperatures from 10 to 300 K in as-grown and rapid thermal annealed (RTA) aluminum doped ZnO nanorods synthesized by an aqueous chemical deposition method using zinc sulfate, aluminum sulfate, and ammonia hydroxide as precursors. RTA of ZnO nanorods at temperatures 650–750∘C was found to result in changing the mechanism of RRS from incoming to outgoing. This change is suggested to be related to the RTA induced improvement of the optical properties of the nanorods. en_US
dc.language.iso en en_US
dc.publisher ELSEVIER en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject semiconductors en_US
dc.subject chemical synthesis en_US
dc.subject luminescence en_US
dc.subject inelastic light scattering en_US
dc.subject light scattering en_US
dc.subject scattering en_US
dc.title Rapid thermal annealing induced change of the mechanism of multiphonon resonant Raman scattering from ZnO nanorods en_US
dc.type Article en_US


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