High Aspect Ratio Ternary Zn1–xCdxO Nanowires by Electrodeposition for Light-Emitting Diode Applications

LUPAN, Oleg; PAUPORTÉ, Thierry; LE BAHERS, Tangui; CIOFINI, Ilaria; VIANA, Bruno

dc.contributor.author	LUPAN, Oleg
dc.contributor.author	PAUPORTÉ, Thierry
dc.contributor.author	LE BAHERS, Tangui
dc.contributor.author	CIOFINI, Ilaria
dc.contributor.author	VIANA, Bruno
dc.date.accessioned	2020-06-17T08:36:50Z
dc.date.available	2020-06-17T08:36:50Z
dc.date.issued	2011
dc.identifier.citation	LUPAN, Oleg, PAUPORTE, Thierry, LE BAHERS, Tangui et al. High Aspect Ratio Ternary Zn1–xCdxO Nanowires by Electrodeposition for Light-Emitting Diode Applications. In: The Journal of Physical Chemistry C. 2011, Vol. 115, Is. 30, pp. 14548-14558. ISSN 1932-7447.	en_US
dc.identifier.issn	1932-7447
dc.identifier.uri	https://doi.org/10.1021/jp202608e
dc.identifier.uri	http://repository.utm.md/handle/5014/8930
dc.description	Access full text - https://doi.org/10.1021/jp202608e	en_US
dc.description.abstract	We present a combined experimental and computational approach to study Zn1–xCdxO nanowires (NWs) and their integration in light-emitting diode (LED) structures. Self-standing Zn1–xCdxO NWs have been electrodeposited on fluorine-doped tin oxide and p-GaN substrates. The electrochemical behavior has been studied, and the reaction mechanism is discussed. Low-dimensional Zn1–xCdxO structures have been obtained for CdCl2 concentrations in the deposition bath lower than 6 μM whereas at higher concentration it is admixed with crystallized CdO and the aspect ratio of the wires is decreased.	en_US
dc.language.iso	en	en_US
dc.publisher	American Chemical Society	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	nanowires	en_US
dc.subject	light-emitting diodes	en_US
dc.subject	diodes	en_US
dc.title	High Aspect Ratio Ternary Zn1–xCdxO Nanowires by Electrodeposition for Light-Emitting Diode Applications	en_US
dc.type	Article	en_US