Articole din publicaţii internaţionale: Recent submissions

Now showing items 2981-3000 of 3223

Calculation of electrical quantities for relay protection of multiphase power lines

CHIORSAC, Mihai; TURCUMAN, Lilia; TURTURICA, Natalia (Institutul de Energetică al Academiei de Științe a Moldovei, 2016)

The paper analyzes the method of calculating the electrical quantities (currents and voltages) for relay protection for different short circuits and phase failure, which can take place on the multiphase electrical power ...
Экономическая оценка когенерационных технологий интегрированных в промышленых устоновках

КЕЛЬМЕНЧУК, К.; АРИОН, В. (Institutul de Energetică al Academiei de Științe a Moldovei, 2016)

В работе рассматривается проблема экономической оценки внедрения когенерации энергии в технологические установки промышленных предприятий (далее - ансамбль технологических установок типа CogIntegr) в условиях Республики ...
Evaluarea economică a tehnologiilor de cogenerare integrate în instalaţiile industriale

CHELMENCIUC, Corina; ARION, Valentin (Institutul de Energetică al Academiei de Științe a Moldovei, 2016)

În lucrare este abordată problema evaluării eficienţei economice a integrării cogenerării energiei în instalaţiile tehnologice din cadrul întreprinderilor industriale (in continuare – ansamblu de instalaţii tehnologice de ...
Economic assessment of integrated cogeneration technologies in industrial instalations

CHELMENCIUC, Corina; ARION, Valentin (Institutul de Energetică al Academiei de Științe a Moldovei, 2016)

The paper addresses the problem of economic assessment of integration of cogeneration with technological installations of the industrial enterprises (further - ensemble of technological installations of CogIntegr type) ...
Повышение энергоэффективности - важное условие для устойчивого развития страны

НЕГУРА, К.; СТРАТАН, М.; АРИОН, В. (Institutul de Energetică al Academiei de Științe a Moldovei, 2016)

В работе рассматриваются вопросы устойчивого развития и перехода к зеленой экономике спроецированные, в частности, на энергетическом секторе. Представлены характеристики ретроспективно потребление энергии в стране и прогноз ...
Sporirea eficienţei energetice – o condiţie esenţială pentru dezvoltarea durabilă a ţării

NEGURA, Calin; STRATAN, Mihail; ARION, Valentin (Institutul de Energetică al Academiei de Științe a Moldovei, 2016)

Lucrarea abordează aspecte ale dezvoltării durabile şi promovării economiei verzi, proiectate in particular pe sectorul Energiei. Sunt prezentate caracteristicile consumului retrospectiv de energie în ţară şi prognoza ...
Increase of energy efficiency – an important condition for sustainable development of country

NEGURA, Calin; STRATAN, Mihail; ARION, Valentin (Institutul de Energetică al Academiei de Științe a Moldovei, 2016)

This paper addresses issues of sustainable development and of shifting to a green economy projected in particular on the energy sector. Characteristics of the national retrospective energy consumption and evolution of ...
A comparison of pores in silicon and pores in III–V compound materials

CHRISTOPHERSEN, M.; LANGA, S.; CARSTENSEN, J.; TIGINYANU, I. M.; FÖLL, H. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2003)

This paper compares the morphologies of porous silicon and porous III–V compounds and discusses their growth mechanisms. Looking into the fine structure of pores, in silicon (meso)pores with intercalating octahedra are ...
Three-dimensional Aerographite-GaN hybrid networks: single step fabrication of porous and mechanically flexible materials for multifunctional applications

SCHUCHARDT, Arnim; BRANISTE, Tudor; MISHRA, Yogendra K.; DENG, Mao; MECKLENBURG, Matthias; STEVENS-KALCEFF, Marion A.; RAEVSCHI, Simion; SCHULTE, Karl; KIENLE, Lorenz; ADELUNG, Rainer; IGINYANU, Ion T (Springer Nature, 2015)

Three dimensional (3D) elastic hybrid networks built from interconnected nano- and microstructure building units, in the form of semiconducting-carbonaceous materials, are potential candidates for advanced technological ...
Strong light scattering and broadband (UV to IR) photoabsorption in stretchable 3D hybrid architectures based on aerographite decorated by ZnO nanocrystallites

TIGINYANU, Ion; GHIMPU, Lidia; GRÖTTRUP, Jorit; POSTOLACHE, Vitalie; MECKLENBURG, Matthias; STEVENS-KALCEFF, Marion A.; URSAKI, Veaceslav; PAYAMI, Nader; FEIDENHANSL, Robert; SCHULTE, Karl; ADELUNG, Rainer; MISHRA, Yogendra Kumar (Springer Nature, 2016)

In present work, the nano- and microscale tetrapods from zinc oxide were integrated on the surface of Aerographite material (as backbone) in carbon-metal oxide hybrid hierarchical network via a simple and single step ...
High-pressure effects on the optical-absorption edge of CdIn2S4, MgIn2S4, and MnIn2S4 thiospinels

RUIZ-FUERTES, J.; ERRANDONEA, D.; MANJÓN, F. J.; MARTÍNEZ-GARCÍA, D.; SEGURA, A.; URSAKI, V. V.; TIGINYANU, I. M. (American Institute of Physics, 2008)

The effect of pressure on the optical-absorption edge of CdIn2S4, MgIn2S4, and MnIn2S4 thiospinels at room temperature is investigated up to 20 GPa. The pressure dependence of their band-gaps has been analyzed using the ...
Pore Etching in III-V and II-VI Semiconductor Compounds in Neutral Electrolyte

TIGINYANU, I. M.; URSAKI, V. V.; MONAICO, E.; FOCA, E.; FÖLL, H. (The Electrochemical Society, 2007)

We propose to use a neutral electrolyte based on an aqueous solution of instead of commonly used aggressive acids or alkaline electrolytes for the purpose of electrochemical nanostructuring of and substrates. It is shown ...
Porous III–V compounds as nonlinear optical materials

TIGINYANU, I. M.; KRAVETSKY, I. V.; LANGA, S.; MAROWSKY, G.; MONECKE, J.; FÖLL, H. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2003)

Electrochemical etching is shown to represent a unique approach for tailoring linear and nonlinear optical properties of III–V compounds. We demonstrate that under defined etching conditions uniformly distributed pores ...
Ordered arrays of metal nanotubes in semiconductor envelope

TIGINYANU, Ion; MONAICO, Elena; MONAICO, Eduard (ELSEVIER, 2008)

We report on fabrication of metal nanotubes in semiconductor nanotemplates possessing ordered two-dimensional hexagonal arrays of pores grown in n-InP crystalline substrates using anodic etching in neutral electrolyte. ...
High-pressure x-ray diffraction study on the structure and phase transitions of the defect-stannite ZnGa2Se4 and defect-chalcopyrite CdGa2S4

ERRANDONEA, D.; KUMAR, Ravhi S.; MANJÓN, F. J.; URSAKI, V. V.; TIGINYANU, I. M. (American Institute of Physics, 2008)

X-ray diffraction measurements on the sphalerite-derivatives ZnGa2Se4ZnGa2Se4 and CdGa2S4CdGa2S4 have been performed upon compression up to 23 GPa in a diamond-anvil cell. ZnGa2Se4ZnGa2Se4 exhibits a defect tetragonal ...
Correlation between morphology and cathodoluminescence in porous GaP

STEVENS-KALCEFF, M. A.; TIGINYANU, I. M.; LANGA, S.; FÖLL, H.; HARTNAGEL, H. L. (American Institute of Physics, 2001)

Porous layers fabricated by anodic etching of n-GaPn-GaP substrates in a sulfuric acid solution were studied by electron microscopy and cathodoluminescence (CL) microanalysis. The morphology of porous layers was found to ...
Single crystalline 2D porous arrays obtained by self organization in n-Inp

LANGA, S.; CHRISTOPHERSEN, M.; CARSTENSEN, J.; TIGINYANU, I. M.; FÖLL, H. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2003)

Self organization is a rather common phenomenon during pore formation in III–V semiconductors. The so called tetrahedron-like pores, the domains of crystallographically oriented pores in n-GaAs, or the macroscopic voltage ...
Fröhlich modes in porous III-V semiconductors

SARUA, A.; MONECKE, J.; IRMER, G.; TIGINYANU, I. M.; GÄRTNER, G.; HARTNAGEL, H. L. (IOP Publishing, 2001)

Porous GaP, InP and GaAs structures fabricated by MeV ion-implantation-assisted electrochemical etching were investigated by Raman and Fourier transform infrared spectroscopy. Fröhlich modes in the frequency gap between ...
Fröhlich modes in gan columnar nanostructures

TIGINYANU, I. M.; SARUA, A.; IRMER, G.; MONECKE, J.; HUBBARD, S. M.; PAVLIDIS, D.; VALIAEV, V. (American Physical Society, 2001)

GaN columnar nanostructures fabricated by electrochemical dissolution of bulk material have been studied by micro-Raman spectroscopy. The anodization induces an increase in the intensity of Raman scattering accompanied by ...
Porous III–V compound semiconductors: formation, properties, and comparison to silicon

FÖLL, H.; CARSTENSEN, J.; LANGA, S.; CHRISTOPHERSEN, M.; TIGINYANU, I. M. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2003)

Pore formation in n-type III–V semiconductors will be discussed and compared to pore formation in silicon. While by now many different kinds of pores were produced in silicon, the “pore zoology” in III–Vs was rather limited ...

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