SIENZ, S.; GERLACH, J. W.; HÖCHE, T.; SIDORENKO, A.; RAUSCHENBACH, B.
(Elservier, 2004)
Hexagonal gallium nitride has been deposited on 6H-SiC by low-energy-ion-beam-assisted molecular-beam epitaxy. X-Ray diffraction measurements indicate the high crystalline quality of the thin films. Cross-section transmission ...