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Browsing Articole din publicaţii internaţionale by Subject "chalcopyrites"

Browsing Articole din publicaţii internaţionale by Subject "chalcopyrites"

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  • Birefringence of CuGa2S4 crystals 
    SYRBU, N.; DOROGAN, A.; URSAKI, V.; STAMOV, I.; TIGINYANU, I. M. (The Electrochemical Society, 2011)
    Investigation of the spectral characteristics as a function of the crystal thickness demonstrates that one can create filters using thin crystals for selecting several spectral lines. The wavelength of these lines is ...
  • Exciton–phonon luminescence and Raman scattering in CuGaS2 crystals 
    SYRBU, N. N.; TEZLEVAN, V. E.; GALBICH, I.; NEMERENCO, L. L.; URSAKI, V. V. (ELSEVIER, 2009)
    Photoluminescence and resonance Raman scattering spectra of CuGaS2 crystals are investigated at low temperature (10K) under the excitation with the radiation from a spectral interval obtained by passing the radiation of ...
  • High-pressure Raman scattering study of defect chalcopyrite and defect stannite ZnGa2Se4 
    VILAPLANA, R.; GOMIS, O.; PÉREZ-GONZÁLEZ, E.; ORTIZ, H. M.; MANJÓN, F. J.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; ALONSO-GUTIÉRREZ, P.; SANJUÁN, M. L.; URSAKI, V. V.; TIGINYANU, I. M. (AIP Publishing LLC, 2013)
    High-pressure Raman scattering measurements have been carried out in ZnGa2Se4 for both tetragonal defect chalcopyrite and defect stannite structures. Experimental results have been compared with theoretical lattice dynamics ...
  • Infrared lattice vibrations of PbGa2S4 
    NEUMANN, H.; SOBOTTA, H.; SYRBU, N. N.; GOLOVEI, V. M. (WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim, 1994)
    Infrared reflectivity spectra of PbGa2S4 single crystals are measured at room temperature in the wavenumber range from 30 to 4000 cm−1 for the polarization directions E ∥ c and E ∥ b. The frequencies of 13 B1u modes and ...
  • Mechanical properties and Raman scattering investigation under indentation of CdGa2S4 and CdGa2Se4 
    SHIKIMAKA, O.; BURLACU, A.; GRABCO, D.; PARVAN, V.; PYRTSAC, C.; URSAKI, V. (IOP Publishing, 2016)
    The behavior of CdGa2S4 and CdGa2Se4 single crystalline semiconductors under Berkovich indentation of the (1 1 2) face in the load range of 10–700 mN has been investigated. Values of hardness and Young’s modulus have been ...
  • Nonlinear pressure dependence of the direct band gap in adamantine ordered-vacancy compounds 
    MANJÓN, F. J.; GOMIS, O.; RODRÍGUEZ-HERNÁNDEZ, P.; PÉREZ-GONZÁLEZ, E.; MUÑOZ, A.; ERRANDONEA, D.; RUIZ-FUERTES, J.; SEGURA, A.; FUENTES-CABRERA, M.; TIGINYANU, I. M.; URSAKI, V. V. (American Physical Society, 2010)
    A strong nonlinear pressure dependence of the optical absorption edge has been measured in defect chalcopyrites CdGa2Se4 and HgGa2Se4. The behavior is due to the nonlinear pressure dependence of the direct band-gap energy ...
  • Optical spectra and energy band structure of single crystalline CuGaS2 and CuInS2 
    LEVCENKO, S.; SYRBU, N. N.; TEZLEVAN, V. E.; ARUSHANOV, E.; DOKA-YAMIGNO, S.; SCHEDEL-NIEDRIG, Th.; LUX-STEINER, M. Ch. (IOP Publishing, 2007)
    The reflection spectroscopy of chalcopyrite CuGaS2 and CuInS2 single crystals has been applied for light polarized perpendicular () and parallel () to the optical axis in the photon energy range between 1.5 and 6 eV at 77 ...
  • Phase transitions in defect chalcopyrite compounds under hydrostatic pressure 
    URSAKI, V. V.; BURLAKOV, I. I.; TIGINYANU, I. M.; RAPTIS, Y. S.; ANASTASSAKIS, E.; ANEDDA, A. (American Physical Society, 1999)
    Tetrahedrally bonded AGa2X4(A=Cd, Zn; X=S, Se) compounds crystallizing in defect chalcopyrite and defect famatinite structures have been studied by Raman spectroscopy under hydrostatic pressure. The pressure-induced changes ...
  • Pressure-Induced Phase Transitions in Cadmium Thiogallate CdGa2Se4 
    GRZECHNIK, A.; URSAKI, V. V.; SYASSEN, K.; LOA, I.; TIGINYANU, I. M.; HANFLAND, M. (ELSEVIER, 2001)
    The high-pressure behavior of semiconducting cadmium thiogallate CdGa2Se4 with the defect chalcopyrite structure (I4, Z=2) is studied by in situ angle-dispersive synchrotron X-ray powder diffraction and optical reflectivity ...
  • Thermally activated cation ordering in ZnGa2Se4single crystals studied by Raman scattering, optical absorption, andab initiocalculations 
    VILAPLANA, R.; GOMIS, O.; PEREZ-GONZÁLEZ, E.; ORTIZ, H. M.; MANJÓN, F. J.; RODRIGUEZ-HERNANDEZ, P.; MUŇOZ, A.; ALONSO-GUTIÉRREZ, P.; SANJUÁN, M. L.; URSAKI, V. V.; TIGINYANU, I. M. (IOP Publishing, 2013)
    Order–disorder phase transitions induced by thermal annealing have been studied in the ordered-vacancy compound ZnGa2Se4 by means of Raman scattering and optical absorption measurements. The partially disordered as-grown ...
  • Vibrational properties of CdGa2S4 
    NEUMANN, H.; SOBOTTA, H.; RIEDE, V.; SYRBU, N. N.; RADAUTSAN, S. I. (WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim, 1984)
    Polarization-dependent infrared reflectivity spectra of CdGa2S4 are measured at 300 K in the wavenumber range from 180 to 500 cm−1. The analysis of the spectra yields three E and four B modes in this frequency range. The ...
  • Vibrational properties of CdGa2S4 at high pressure 
    GALLEGO-PARRA, S.; GOMIS, O.; VILAPLANA, R.; ORTIZ, H. M.; PÉREZ-GONZÁLEZ, E.; LUNA, R.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; URSAKI, V. V.; TIGINYANU, I. M.; MANJÓN, F. J. (AIP Publishing LLC, 2019)
    Raman scattering measurements have been performed in cadmium digallium sulphide (CdGa2S4) with defect chalcopyrite structure up to 25 GPa in order to study its pressure-induced phase transitions. These measurements have ...
  • Vibrational study of HgGa2S4 under high pressure 
    VILAPLANA, R.; ROBLEDILLO, M.; GOMIS, O.; SANS, J. A.; MANJÓN, F. J.; PÉREZ-GONZÁLEZ, E.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; TIGINYANU, I. M.; URSAKI, V. V. (American Institute of Physics, 2013)
    In this work, we report on high-pressure Raman scattering measurements in mercury digallium sulfide (HgGa2S4) with defect chalcopyrite structure that have been complemented with lattice dynamics ab initio calculations. Our ...

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