IRTUM – Institutional Repository of the Technical University of Moldova

Browsing Articole din publicaţii internaţionale by Subject "chalcogenides"

Browsing Articole din publicaţii internaţionale by Subject "chalcogenides"

Sort by: Order: Results:

  • Chalcogenide based gas sensors 
    TSIULYANU, D.; MARIAN, S.; LIESS, H.-D.; EISELE, I. (National Institute of Optoelectronics, Romania, 2003)
    Evidence for direct application of the chalcogenide semiconductors for gas sensing is considered. Two kinds of sensitive thin film structures have been fabricated and studied, using both artificial dimorphite (As4S3) and ...
  • Chalcogenide glassy-based photoresists for microelectronics 
    TSIULYANU, D. I. (IEEE, 1995)
    Possibilities of application in microelectronics of chalcogenide glassy semiconductors (ChGS) as inorganic high-resolution photoresists is treated. A brief consideration of three main effects: photostructural transformations, ...
  • Chalcogenide semiconductor based sensor for fast NO/sub 2/ detection 
    TSIULYANU, D.; MARIAN, S.; MIRON, V.; POTJE-KAMLOTH, K.; LIESS, H.-D. (IEEE, 2000)
    For the first time if is shown that thin films based on tellurium alloys exhibit high sensitivity to nitrogen dioxide at room temperature. The resistance of the films decreases reversibly in the presence of NO/sub 2/. ...
  • Chalcogenide-based chemical sensors for atmospheric pollution control 
    MARIAN, S.; TSIULYANU, D.; MARIAN, T.; LIESS, H.-D. (De Gruyter, 2001)
    The authors report about characterization of chalcogenide-based thin films, as a materials for gas-sensing applications. The sensing behavior of the As–S–Te films was tested with environmental pollutant gases such as NO2, ...
  • Composition and Surface Optical Properties of GaSe:Eu Crystals before and after Heat Treatment 
    SPRINCEAN, Veaceslav; QIU, Haoyi; TJARDTS, Tim; LUPAN, Oleg; UNTILĂ, Dumitru; AKTAS, Cenk; ADELUNG, Rainer; LEONTIE, Liviu; CARLESCU, Aurelian; GURLUI, Silviu; CARAMAN, Mihail (MDPI (Basel, Switzerland), 2024)
    This work studies the technological preparation conditions, morphology, structural characteristics and elemental composition, and optical and photoluminescent properties of GaSe single crystals and Eu-doped b–Ga2O3 ...
  • Crystal structure of HgGa2Se4 under compression 
    GOMIS, Oscar; VILAPLANA, Rosario; MANJÓN, Francisco Javier; SANTAMARÍA-PÉREZ, David; ERRANDONEA, Daniel; PÉREZ-GONZÁLEZ, Eduardo; LÓPEZ-SOLANO, Javier; RODRÍGUEZ-HERNÁNDEZ, Plácida; MUÑOZ, Alfonso; TIGINYANU, Ion Mihail; URSAKI, Veaceslav Vladimir (ELSEVIER, 2013)
    We report on high-pressure x-ray diffraction measurements up to 17.2GPa in mercury digallium selenide (HgGa2Se4). The equation of state and the axial compressibilities for the low-pressure tetragonal phase have been ...
  • Dimorphite based gas sensitive thin films 
    MARIAN, S.; POTJE-KAMLOTH, K.; TSIULYANU, D.; LIESS, H.-D. (Elsevier, 2000)
    For the first time it was observed that thin films based on artificial dimorphite (As4S3) exhibit gas sensitivity at room temperature. A sandwich metal-semiconductor-metal (MSM) structure with dimorphite as the semiconducting ...
  • Ge–As–Te-based gas sensor selective to low NO2 concentrations 
    MARIAN, S.; TSIULYANU, D.; LIESS, H.-D. (Elsevier, 2001)
    A new kind of gas sensor based on chalcogenide glassy semiconductors for the detection of nitrogen dioxide has been investigated. It contains a sandwich metal–semiconductor (Ge–As–Te ternary alloys)–metal structure which ...
  • Investigation of the oxygen, nitrogen and water vapour cross-sensitivity to NO2 of tellurium-based thin films 
    TSIULYANU, D.; STRATAN, I.; TSIULYANU, A.; LIESS, H.-D.; EISELE, I. (Elsevier, 2007)
    Effect of O2, N2 and H2O to electrical behavior of tellurium-based films as well as cross-sensitivity to NO2 gas has been studied at temperatures between 20 and 70°C. The increase of oxygen partial pressure in N2+O2 carrier ...
  • Nanostructured Al-doped zinc oxide films by rapid photothermal processing for solar cells applications 
    SISIANU, Teodor; SISIANU, Sergiu; SONTEA, Victor; POCAZNOI, Ion; LUPAN, Oleg; CHOW, Lee; KHALLAF, Hani; MONAICO, Eduard; RAILEAN, Serghei (Technical University of Moldova, 2007)
    Nanostructured ZnO thin films have been deposited on Si substrates using a novel chemical solution deposition method. The structure, morphology, and electrical properties of the films were studied for different concentrations ...
  • On the Influence of Surface Phenomena Upon Charge Transport in Te-Based Glassy Semiconductors 
    TSIULYANU, Dumitru; CIOBANU, M. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2018)
    The effect of surface phenomena caused by adsorption of NO2, CO2, and H2O vapor on the charge transport in thin films of chalcogenide glassy semiconductors (ChGS) of the As2S3Ge8–Te system has been studied.
  • On the photodissolution kinetics of silver in glassy As2S3 
    TSIULYANU, D.; STRATAN, I. (Elsevier, 2010)
    The kinetics of the photodissolution of Ag into glassy As2S3 films and its dependence on temperature have been studied by monitoring the changes that occur both in their transmission spectra and transmission of weakly ...
  • Photoconductive properties of HgGa2S4 
    RICCI, P. C.; ANEDDA, A.; CORPINO, R.; TIGINYANU, I. M.; URSAKI, V. V. (ELSEVIER, 2003)
    Mercury thiogallate, HgGa2S4 is a defect chalcopyrite semiconductor with the space group S42 which offers a combination of attractive properties for applications. In order to obtain information about the electron states ...
  • Preparation, Chemical Composition, and Optical Properties of (β–Ga2O3 Composite Thin Films)/(GaSxSe1−x Lamellar Solid Solutions) Nanostructures 
    SPRINCEAN, Veaceslav; LEONTIE, Liviu; CARAMAN, Iuliana; LUPAN, Oleg; ADELING, Rainer; GURLUI, Silviu; CARLESCU, Aurelian; DOROFTEI, Corneliu; CARAMAN, Mihail (MDPI, Basel, Switzerland, 2023)
    GaSxSe1−x solid solutions are layered semiconductors with a band gap between 2.0 and 2.6 eV. Their single crystals are formed by planar packings of S/Se-Ga-Ga-S/Se type, with weak polarization bonds between them, which ...
  • A programmable metallization cell based on Ag-As2S3 
    STRATAN, I.; TSIULYANU, D.; EISELE, I. (National Institute of Optoelectronics, Romania, 2006)
    The switching properties of a Programmable Metallization Cell (PMC) structure based on the Ag-As2S3 solid electrolyte were investigated. It was found that at 120 mV of forward bias voltage the device switches from an off ...
  • Resonance Raman scattering and excitonic spectra in TlInS2 crystals 
    ZALAMAI, V. V.; STAMOV, I. G.; SYRBU, N. N.; URSAKI, V. V.; DOROGAN, V. (ELSEVIER, 2015)
    The excitons ground and excited states for Ea and Eb polarizations in absorption and reflection spectra of TlInS2 crystals were detected. The fundamental parameters of excitons and bands were determined at k=0. The ...
  • Room temperature a.c. operating gas sensors based on quaternary chalcogenides 
    TSIULYANU, D.; CIOBANU, M. (Elsevier, 2016)
    Impedance spectra of quaternary As–Ge–S–Te based alloys were investigated in both dry synthetic air and mixture with nitrogen dioxide in order to assess the use of these materials in future gas sensors working at room ...
  • WO3/WS2 composite materials for gas sensor and energy storage applications 
    URSAKI, V.; GHIMPU, L.; MESTERCA, R.; BRANCOVEANU, O.; PRODANA, M.; ENACHESCU, M.; DIMITRACHI, S.; TIGINYANU, I. (Institutul de Fizică Aplicată, 2018)
    Transition metal binary compounds, especially oxides and chalcogenides, are material of choice for many applications. Particularly, tungsten trioxide (WO3) has been extensively studied due to its outstanding electrochromic ...
  • Work function and AC operating gas-sensitive films based on quaternary chalcogenides 
    TSIULYANU, D.; CIOBANU, M.; LIESS, H.-D. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2016)
    A study of quaternary alloys of As–S–Ge–Te was performed in order to assess their use in future gas sensors operating at room temperature. To elucidate the effect of tellurium, the quaternary compositions As2Te13Ge8S3 and ...

Search DSpace


Browse

My Account