VOLCIUC, O. S.; POPA, V.; TIGINYANU, I. M.; SKURATOV, V. A.; CHO, M.; PAVLIDIS, D.
(Institute of Applied Physics, Academy of Sciences of Moldova, Chisinau, Republic of Moldova, 2010)
Photoelectrochemically nanostructured GaN epilayers were found to exhibit good sensitivity towards CO in the temperature range from 180 to 280°C. We show that subjection of nanostructured GaN samples to 166 MeV Xe+23 ion ...