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Browsing Articole din publicaţii internaţionale by Author "RUSU, E."

Browsing Articole din publicaţii internaţionale by Author "RUSU, E."

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  • About the nature of deformation anisotropy of the InP:Zn crystals 
    GRABKO, Daria; PALISTRANT, Natalia; DYNTU, Maria; MEDINSCHI, Maria; RUSU, E. (Romanian Academy, 1998)
    The regularities of plastic deformation under the action of concentrated load in two crystallographic directions <100> and <110> in InP crystals doped with zinc have been investigated.
  • Characterization of thin ZnO film by optical second harmonic generation: experiment and theory 
    BUINITSKAYA, G.; KRAVETSKY, I.; KULYUK, L.; MIROVITSKII, V.; RUSU, E. (IEEE, 1998)
    Thin polycrystalline zinc oxide film deposed on glass substrate have been investigated by optical second harmonic generation (SHG). The intensity of SHG in dependence of rotation angle of fundamental beam polarization for ...
  • Coordinate sensitive photodetectors based on InGaAs/InP heterostructures 
    BUDEANU, E.; GROZESCU, I.; PURICA, M.; RUSU, E.; SLOBODCHIKOV, S. V. (IEEE, 2000)
    The dependence of the longitudinal photo-e.m.f. in In/sub 0.53/Ga/sub 0.47/As p-n junctions on the coordinate x of the light spot and temperature has been investigated. A linear dependence V/sub phl/=f(x) has been observed ...
  • Design and optimization of InGaAs/InP photodetector for coordinate sensitive detection systems 
    PURICA, M.; BUDIANU, E.; GROZESCU, I.; RUSU, E.; SLOBODCHIKOV, S. V. (IEEE, 2001)
    The quadrant p-i-n photodiode and the position sensing detector based on the longitudinal photo-effect are the most suitable photodetector structures for coordinate sensitive detection systems. The optimization of a quadrant ...
  • Electrical properties of the CdS/InP heterostructures for photovoltaic applications 
    PURICA, M.; BUDIANU, E.; RUSU, E.; ARABADJI, P. (Elservier, 2006)
    The n+-CdS/p-InP heterojunctions have been prepared by chemical vapor deposition in a quasi-closed volume and H2 transport of CdS on InP substrate. The n+-CdS/p-p+-InP heterojunction solar cells obtained using this technique ...
  • Enhanced radiation hardness of ZnO nanorods versus bulk layers 
    BURLACU, A.; URSAKI, V. V.; LINCOT, D.; SKURATOV, V. A.; PAUPORTE, T.; RUSU, E.; TIGINYANU, I. M. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2008)
    It is shown that ZnO nanorods grown by MOCVD exhibit enhanced radiation hardness against high energy heavy ion irradiation as compared to bulk layers. The decrease of the luminescence intensity induced by 130 MeV Xe+23 ...
  • Fabrication and characterization of an individual ZnO microwire-based UV photodetector 
    CHAI, G. Y.; CHOW, L.; LUPAN, O.; RUSU, E.; STRATAN, G. I.; HEINRICH, H.; URSAKI, V. V.; TIGINYANU, I. M. (ELSEVIER, 2011)
    In this paper, a single ZnO microwire-based photodetector for the monitoring of ultraviolet (UV) radiation is described. Single crystal ZnO microwires were synthesized using a chemical vapor deposition (CVD) on the Si or ...
  • High sensitivity and low dark current PIN photodiode with homojunction in n-InGaAaS/InP isotype heterostructure 
    BUDIANU, E.; PURICA, M.; RUSU, E.; NAN, S. (IEEE, 1997)
    The preparation and properties of Zn-diffusion homojunction InP/In/sub 0.53/Ga/sub 0.47/As photodiodes capable to operate in the 0.8-1.7 /spl mu/m wavelength range are described. These PIN photodiodes exhibit a sensitivity ...
  • How to Improve the Performance of Porous Silicon-Based Gas and Vapor Sensors? Approaches and Achievements 
    KOROTCENKOV, Ghenadii; RUSU, E. (WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim, 2019)
    It is shown that, along with the advantages, sensors based on porous silicon (PSi) have disadvantages that inhibit their widespread use. The parameters of PSi which can affect the performance of PSi-based sensors are ...
  • Increasing of dislocation mobility by heat treatment of deformed pure and doped InP crystals 
    GRABCO, D.; PALISTRANT, N.; RUSU, E. (Elservier, 2001)
    The influence of dopant impurity type on the dislocation mobility in InP crystals is investigated. It is shown that the dislocation mobility (γ, γs) under action of a concentrated load depends on impurity type and deformation ...
  • Lattice dynamics of ZnAl2O4 and ZnGa2O4 under high pressure 
    LÓPEZ-MORENO, S.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; ROMERO, A. H.; MANJÓN, F. J.; ERRANDONEA, D.; RUSU, E.; URSAKI, V. V. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2011)
    In this work we present a first-principles density functional study of the vibrational properties of ZnAl2O4 and ZnGa2O4 as function of hydrostatic pressure. Based on our previous structural characterization of these two ...
  • Local Nonlinearities of ZnO Nanostructures 
    SHVIRKOV, K.; KEDRYAVTSEV, A.; LAVROV, S.; SHERSTYUK, N. E.; MISHINA, E. D.; RUSU, E.; KULYUK, L. (EMW Publishing, 2012)
    The results of two-photon luminescence studies of zinc oxide (ZnO) microstructures consisting of microrods and microplanes are presented in this paper. When ZnO microstructure is excited by a femtosecond laser with a ...
  • Luminescence of ZnGa2Î4 AND ZnAl2Î4 spinels doped with Eu3+AND Tb3+ ions 
    RUSU, E.; URSAKI, V.; NOVITSCHI, G.; BURLACU, A.; PETRENKO, P.; KULIUK, L. (I. I. Mechnikov National University, Odessa, 2008)
    Spinel type mono-phase the ZnGa2O4 and ZnAl2O4 compounds doped with Eu3+ and Tb3+ ions were obtained using two methods: solid phase reactions and deposition from chemical solutions. The luminescent analysis of the materials ...
  • Luminescence properties of ZnGa2O4 and ZnAl2O4 spinels doped with Eu3+ and Tb3+ ions 
    RUSU, E.; URSAKI, V.; NOVITSCHI, G.; VASILE, M.; PETRENCO, P.; KULYUK, L. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2009)
    Spinel-type ZnGa2O4 and ZnAl2O4 powders doped with Eu3+ and Tb3+ ions, including dual doping, have been prepared by solid phase reactions and by deposition from chemical solutions. XRD analysis demonstrates the high quality ...
  • The luminescent properties of a ZnGa2O4 spinel doped with Eu 3+ and Er3+ ions 
    VASILE, M.; VLAZAN, P.; SFIRLOAGA, P.; GROZESCU, I.; AVRAM, N. M.; RUSU, E. (IOP Publishing, 2009)
    Nanophosphor of ZnGa2O4:Eu3+ and Er3+ were synthesized by the hydrothermal method. ZnGa2O4 is an intrinsic blue light emitter with a wavelength peak of approximately 608 nm depending on the gallium ratio. A luminescent ...
  • Mechanical Properties of Oxide Coatings Having Sensor Application 
    GRABCO, D.; PALISTRANT, N.; JITARU, R.; RUSU, E. (Springer Nature Switzerland, 2003)
    An experimental investigation of the mechanical properties of planar structures of ZnO/Si for different indentor loads has been described. The influence of intensive solar-like light and temperature on hardness and plasticity ...
  • Microsensor on single ZnO microwire 
    CHAI, G.; RUSU, E.; CHOW, L.; STRATAN, G. I.; HEINRICH, H.; PARK, S.; SCHULTE, A.; LUPAN, O.; TROFIM, V.; RAILEAN, S. (Institute of Electrical and Electronics Engineerings, IEEE, 2009)
    For development of individual ZnO microwire in hydrogen sensors an environmentally benign synthesis process and fabrication route are required. Here we report a synthesis route for ZnO microwires using vapour phase process. ...
  • Optical and electrical properties of the CdS/InP heterostructures solar cells 
    SLOBODCHIKOV, S. V.; RUSU, E.; ARABADJI, P.; PURICA, M.; BUDIANU, E. (IEEE, 2004)
    Technological procedures of solar cells fabrication based on n/sup +/-CdS/p-p/sup +/-InP heterostructures are presented. The conversion efficiency under AM 1.5 illumination condition of the obtained solar cell was /spl ...
  • Optical and structural investigation of ZnO thin films prepared by chemical vapor deposition (CVD) 
    PURICA, M.; BUDIANU, E.; RUSU, E.; DANILA, M.; GAVRILA, R. (Elservier, 2002)
    Transparent and conductive ZnO thin films have been prepared by a method derived from chemical vapor deposition using Zn (C5H7O2)2 as Zn source. The deposited thin ZnO layers of ∼0.1 μm thickness on Si and InP semiconductor ...
  • Polysilicon thin layers for photovoltaic applications 
    BUDIANU, E.; PURICA, M.; RUSU, E.; MANEA, E.; GAVRILA, R. (IEEE, 2002)
    Thin layers of polycrystalline silicon as the optically absorbing material for photovoltaic devices represents a promising way for simultaneously achieving good performances and low manufacturing cost. In this paper, the ...

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