SYRBU, N. N.; TIGINYANU, I. M.; URSAKI, V. V.; ZALAMAI, V. V.; POPA, Veaceslav; HUBBARD, S. M.; PAVLIDIS, Dimitris
(Cambridge University Press, 2003)
GaN layers grown on sapphire substrates were characterized using high resolution optical reflectivity and absorption spectroscopy in the region of ground and excited exciton states. The main exciton parameters are deduced ...