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Browsing Articole din publicaţii internaţionale by Author "PAVLIDIS, D."

Browsing Articole din publicaţii internaţionale by Author "PAVLIDIS, D."

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  • Design and maskless fabrication of ultrathin suspended membranes of GaN 
    TIGINYANU, I. M.; POPA, V.; STEVENS-KALCEFF, M. A.; GERTHSEN, D.; BRENNER, P.; PAVLIDIS, D. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2012)
    We report the maskless fabrication of ultrathin suspended GaN membranes designed by focused ion beam treatment of the GaN epilayer surface with subsequent photoelectrochemical etching. This technological approach allows ...
  • Electrical characterization and cathodoluminescence microanalysis of AlN/GaN heterostructures 
    HUBBARD, S. M.; PAVLIDIS, D.; VALIAEV, V.; STEVENS-KALCEFF, M. A.; TIGINYANU, I. M. (ELSEVIER, 2002)
    Low-pressure MOCVD is used to grow AlN/GaN MIS-type heterostructures with AlN thickness between 3 and 35 nm. The two-dimensional electron gas (2DEG) Hall mobility was found to decrease with AlN thickness. The measured room ...
  • Fröhlich modes in gan columnar nanostructures 
    TIGINYANU, I. M.; SARUA, A.; IRMER, G.; MONECKE, J.; HUBBARD, S. M.; PAVLIDIS, D.; VALIAEV, V. (American Physical Society, 2001)
    GaN columnar nanostructures fabricated by electrochemical dissolution of bulk material have been studied by micro-Raman spectroscopy. The anodization induces an increase in the intensity of Raman scattering accompanied by ...
  • The impact of high energy ion irradiation upon CO gas sensitivity of nanostructured GaN epilayers 
    VOLCIUC, O. S.; POPA, V.; TIGINYANU, I. M.; SKURATOV, V. A.; CHO, M.; PAVLIDIS, D. (Springer Nature Switzerland, 2010)
    Photoelectrochemically nanostructured GaN epilayers were found to exhibit good sensitivity towards CO in the temperature range from 180 to 280°C. We show that subjection of nanostructured GaN samples to 166 MeV Xe+23 ion ...
  • The Impact of High Energy Ion Irradiation Upon CO Gas Sensitivity of Nanostructured GaN Epilayers 
    VOLCIUC, O. S.; POPA, V.; TIGINYANU, I. M.; SKURATOV, V. A.; CHO, M.; PAVLIDIS, D. (Institute of Applied Physics, Academy of Sciences of Moldova, Chisinau, Republic of Moldova, 2010)
    Photoelectrochemically nanostructured GaN epilayers were found to exhibit good sensitivity towards CO in the temperature range from 180 to 280°C. We show that subjection of nanostructured GaN samples to 166 MeV Xe+23 ion ...
  • Luminescence of GaN nanocolumns obtained by photon-assisted anodic etching 
    TIGINYANU, I. M.; URSAKI, V. V.; ZALAMAI, V. V.; LANGA, S.; HUBBARD, S.; PAVLIDIS, D.; FÖLL, H. (American Institute of Physics, 2003)
    GaN nanocolumns with transverse dimensions of about 50 nm were obtained by illumination-assisted anodic etching of epilayers grown by metalorganic chemical vapor deposition on sapphire substrates. The photoluminescence ...
  • Morphology, luminescence, and electrical resistance response to H2 and CO gas exposure of porous InP membranes prepared by electrochemistry in a neutral electrolyte 
    VOLCIUC, O.; MONAICO, E.; ENACHI, M.; URSAKI, V. V.; PAVLIDIS, D.; POPA, V.; TIGINYANU, I. M. (ELSEVIER, 2010)
    Porous InP membranes have been prepared by anodization of InP wafers with electron concentration of 1×1017cm−3 and 1×1018cm−3 in a neutral NaCl electrolyte. The internal surfaces of pores in some membranes were modified ...
  • Optical characterization of AlN/GaN heterostructures 
    URSAKI, V. V.; TIGINYANU, I. M.; ZALAMAI, V. V.; HUBBARD, S. M.; PAVLIDIS, D. (American Institute of Physics, 2003)
    AlN/GaN/sapphire heterostructures with AlN gate film thickness of 3–35 nm are characterized using photoreflectivity (PR) and photoluminescence (PL) spectroscopy. Under a critical AlN film thickness, the luminescence from ...
  • Persistent photoconductivity and optical quenching of photocurrent in GaN layers under dual excitation 
    URSAKI, V. V.; TIGINYANU, I. M.; RICCI, P. C.; ANEDDA, A.; HUBBARD, S.; PAVLIDIS, D. (American Institute of Physics, 2003)
    Persistent photoconductivity (PPC) and optical quenching (OQ) of photoconductivity (PC) were investigated in a variety of n-GaN layers characterized by different carrier concentrations, luminescence characteristics, and ...
  • Sharp variations in the temperature dependence of optical reflectivity from AlN/GaN heterostructures 
    URSAKI, V. V.; TIGINYANU, I. M.; SYRBU, N. N.; ZALAMAI, V. V.; HUBBARD, S.; PAVLIDIS, D. (IOP Publishing, 2002)
    Sharp variations in optical reflectivity were observed when cooling and heating AlN/GaN heterostructures on sapphire substrates between room temperature and 10 K. The reflectivity was found to decrease at a definite ...
  • Technology of Wide-Bandgap Diode Structures for Highfrequency Operation 
    MUTAMBA, K.; YILMAZOGLU, O.; COJOCARI, O.; SYDLO, C.; PAVLIDIS, D.; HARTNAGEL, H. L. (IEEE, 2006)
    This paper reports on technology development aspects for GaN-based diodes in view of their application at high frequencies. The investigated devices include structures for transferred electron effects for operation at high ...

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