IRTUM – Institutional Repository of the Technical University of Moldova

Browsing Articole din publicaţii internaţionale by Author "PARVAN, V."

Browsing Articole din publicaţii internaţionale by Author "PARVAN, V."

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  • Birefringence in PbGa2S4 AND CdGa2S4 crystals 
    NEMERENCO, L.; PARVAN, V.; SYRBU, N.; MASNIC, A. (Institutul de Fizică Aplicată al AŞM, 2012)
    Cadmium thiogallate CdGa2S4 has a coefficient of nonlinear susceptibility is five times greater than the coefficient of nonlinear susceptibility of niobate lithium . The dispersion of birefringence in CdGa2S4 and PbGa2S4 ...
  • Interference of ordinary and extraordinary waves in AgAsS2 crystals 
    SYRBU, N. N.; STAMOV, I. G.; URSAKI, V. V.; PARVAN, V.; IVANENCO, Yu. (ELSEVIER, 2012)
    The anisotropy of the near-bandgap absorption is investigated in AgAsS2 crystals. The refraction indices, n and n respectively for the Ec and Ec polarizations as well as the spectral dependence of the refraction ...
  • Mechanical behavior at point contact of CdGa2S4 and CdGa2Se4 
    PYRTSAC, C.; SHIKIMAKA, O.; GRABCO, D.; PRISACARU, A.; PARVAN, V.; URSAKI, V. (Academia de Ştiinţe a Moldovei, 2014)
    In this study the deformation peculiarities of CdGa2S4 and CdGa2Se4 subjected to point contact (indentation) were investigated. By applying a depth-sensing nanoindentation technique with Berkovich pyramidal diamond indenter, ...
  • Mechanical properties and Raman scattering investigation under indentation of CdGa2S4 and CdGa2Se4 
    SHIKIMAKA, O.; BURLACU, A.; GRABCO, D.; PARVAN, V.; PYRTSAC, C.; URSAKI, V. (IOP Publishing, 2016)
    The behavior of CdGa2S4 and CdGa2Se4 single crystalline semiconductors under Berkovich indentation of the (1 1 2) face in the load range of 10–700 mN has been investigated. Values of hardness and Young’s modulus have been ...
  • Optical spectra and energy band structure of AgAsS2 crystals 
    STAMOV, I. G.; SYRBU, N. N.; URSAKI, V. V.; PARVAN, V. (ELSEVIER, 2012)
    Ground and excited states of three exciton series are observed in the region of fundamental absorption edge of AgAsS2 crystals. The contours of exciton reflection spectra are calculated and the main parameters of excitons ...

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