IRTUM – Institutional Repository of the Technical University of Moldova

Browsing Articole din publicaţii internaţionale by Author "HUBBARD, S. M."

Browsing Articole din publicaţii internaţionale by Author "HUBBARD, S. M."

Sort by: Order: Results:

  • Electrical characterization and cathodoluminescence microanalysis of AlN/GaN heterostructures 
    HUBBARD, S. M.; PAVLIDIS, D.; VALIAEV, V.; STEVENS-KALCEFF, M. A.; TIGINYANU, I. M. (ELSEVIER, 2002)
    Low-pressure MOCVD is used to grow AlN/GaN MIS-type heterostructures with AlN thickness between 3 and 35 nm. The two-dimensional electron gas (2DEG) Hall mobility was found to decrease with AlN thickness. The measured room ...
  • Free excitons in strained MOCVD-grown GaN layers 
    SYRBU, N. N.; TIGINYANU, I. M.; URSAKI, V. V.; ZALAMAI, V. V.; POPA, Veaceslav; HUBBARD, S. M.; PAVLIDIS, Dimitris (Cambridge University Press, 2003)
    GaN layers grown on sapphire substrates were characterized using high resolution optical reflectivity and absorption spectroscopy in the region of ground and excited exciton states. The main exciton parameters are deduced ...
  • Fröhlich modes in gan columnar nanostructures 
    TIGINYANU, I. M.; SARUA, A.; IRMER, G.; MONECKE, J.; HUBBARD, S. M.; PAVLIDIS, D.; VALIAEV, V. (American Physical Society, 2001)
    GaN columnar nanostructures fabricated by electrochemical dissolution of bulk material have been studied by micro-Raman spectroscopy. The anodization induces an increase in the intensity of Raman scattering accompanied by ...
  • Optical characterization of AlN/GaN heterostructures 
    URSAKI, V. V.; TIGINYANU, I. M.; ZALAMAI, V. V.; HUBBARD, S. M.; PAVLIDIS, D. (American Institute of Physics, 2003)
    AlN/GaN/sapphire heterostructures with AlN gate film thickness of 3–35 nm are characterized using photoreflectivity (PR) and photoluminescence (PL) spectroscopy. Under a critical AlN film thickness, the luminescence from ...

Search DSpace


Browse

My Account