IRTUM – Institutional Repository of the Technical University of Moldova

Browsing Articole din publicaţii internaţionale by Author "GÄRTNER, G."

Browsing Articole din publicaţii internaţionale by Author "GÄRTNER, G."

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  • Fröhlich modes in porous III-V semiconductors 
    SARUA, A.; MONECKE, J.; IRMER, G.; TIGINYANU, I. M.; GÄRTNER, G.; HARTNAGEL, H. L. (IOP Publishing, 2001)
    Porous GaP, InP and GaAs structures fabricated by MeV ion-implantation-assisted electrochemical etching were investigated by Raman and Fourier transform infrared spectroscopy. Fröhlich modes in the frequency gap between ...
  • Fröhlich vibrational modes in porous ZnSe studied by Raman scattering and Fourier transform infrared reflectance 
    IRMER, G.; MONAICO, E.; TIGINYANU, I. M.; GÄRTNER, G.; URSAKI, V. V.; KOLIBABA, G. V.; NEDEOGLO, D. D. (IOP Publishing, 2009)
    Arrays of parallel pores with a diameter of around 60 nm have been introduced by anodic etching in ZnSe single crystals with a free electron concentration of 4 × 1017 cm−3. Porosity-induced Fröhlich vibrational modes were ...
  • Raman and IR-Reflectance Spectra of Porous III–V Semiconductor Structures 
    SARUA, A.; GÄRTNER, G.; IRMER, G.; MONECKE, J.; TIGINYANU, I. M.; HARTNAGEL, H. L. (WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 2000)
    Porous layers on the basis of LEC-grown n-type crystals of (111)-GaP and (100)-InP were fabricated by electrochemical etching in aqueous acidic solutions. The prepared samples were studied by micro-Raman analysis and by ...

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