Detection in the contacts with bismuth-antimony alloy when the surface states are in dynamic regime

Abstract

Diode detectors (DD) are widely used in electronic information and communication systems. In this paper the numerical modeling of the electrical potential distribution and current passing in the contacts of niobium nitride (NbN) with semiconductor alloy bismuth-antimony (Bi-Sb) was made. Earlier we studied situation when the surface states had time to recharge with applied electric voltage (a “static” regime). In this article an opposite situation is studied, when the surface states have no time to recharge with applied electric voltage (a “dynamic” regime). There were analyzed possibilities to create the diode detectors based on these contacts and working at liquid helium temperatures 4.2 K and 1 K. The dependences of the current responsivity (CR), the voltage responsivity (VR) and the noise equivalent power (NEP) on the signal frequency (f) were analyzed. The obtained results were compared with literature data. Both DD working at temperature of liquid nitrogen (T = 77.4 K) and liquid helium were considered. The comparison with existent literature data shows the proposed DD can be 10100 times better. The physical reasons of these advantages were discussed. It is shown that unique properties of Bi-Sb alloys and especially of Bi0.88Sb0.12 alloy make these alloys to be the very perspective materials for cryoelectronics.