Resonance Raman scattering and entanglement in transition-metal dichalcogenide semiconductor MOS2 QDS

Abstract

Molybdenum disulfide (MoS2) is widely used in optoelectronic devices due to its properties like high mobility, effective luminescence and strong binding energy. When 2D TMDs are reduced to 0D (zero dimensional) then we have a single MoS2 quantum dot (QD), and an entirely special electronic property arises due to its quantum confinement effect which exhibits a larger direct band gap (3.96 eV) when compared to monolayer 2D sheets (1.89 eV)[1].