Resonance Raman scattering and entanglement in transition-metal dichalcogenide semiconductor MOS2 QDS

dc.contributor.author	NISTREANU, A.
dc.date.accessioned	2019-11-02T10:48:11Z
dc.date.available	2019-11-02T10:48:11Z
dc.date.issued	2019
dc.identifier.citation	NISTREANU, A. Resonance Raman scattering and entanglement in transition-metal dichalcogenide semiconductor MOS2 QDS. In: Amorphous and Nanostructured Chalcogenides. Abstract Book: proc. of the 9th International Conference, 30 June – 4 July, 2019. Chişinău, 2019, pp. 26-27.	en_US
dc.identifier.uri	http://repository.utm.md/handle/5014/5891
dc.description	Abstract	en_US
dc.description.abstract	Molybdenum disulfide (MoS2) is widely used in optoelectronic devices due to its properties like high mobility, effective luminescence and strong binding energy. When 2D TMDs are reduced to 0D (zero dimensional) then we have a single MoS2 quantum dot (QD), and an entirely special electronic property arises due to its quantum confinement effect which exhibits a larger direct band gap (3.96 eV) when compared to monolayer 2D sheets (1.89 eV)[1].	en_US
dc.language.iso	en	en_US
dc.publisher	Tehnica UTM	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	molybdenum disulfide	en_US
dc.subject	optoelectronic devices	en_US
dc.subject	Raman scattering	en_US
dc.title	Resonance Raman scattering and entanglement in transition-metal dichalcogenide semiconductor MOS2 QDS	en_US
dc.type	Article	en_US