Switching effect properties on Sn-doped Sb70Te30 thin films

ROCCA, J. A.; RODRÍGUEZ, O. C.; UREÑA, M. A.; BILOVOL, V.; FONTANA, M.

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Switching effect properties on Sn-doped Sb70Te30 thin films

ROCCA, J. A.; RODRÍGUEZ, O. C.; UREÑA, M. A.; BILOVOL, V.; FONTANA, M.

URI: http://repository.utm.md/handle/5014/5885

Date: 2019

Abstract:

Ge-Sb-Te phase-change materials in compositions close to Ge2Sb2Te5 and doped with Sn have been proposed to improve performance of phase-change memories (PCM) [1]. In a previous work we found that Sb70Te30 thin films show a sharp fall in the electrical resistance in a narrow temperature range when heating [2]. Thus, in this work we studied the effect of the addition of tin to this composition.